-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for IRF7832TRPBF by Infineon Technologies AG
Results Overview of IRF7832TRPBF by Infineon Technologies AG
- Distributor Offerings: (34 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF7832TRPBF Information
IRF7832TRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF7832TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
2468025
|
Farnell | MOSFET, N CH, 30V, 20A, SOIC-8 RoHS: Compliant Min Qty: 1 Lead time: 13 Weeks, 1 Days Container: Cut Tape | 5003 |
|
$0.4712 / $1.0656 | Buy Now |
|
DISTI #
2468025RL
|
Farnell | MOSFET, N CH, 30V, 20A, SOIC-8 RoHS: Compliant Min Qty: 100 Lead time: 13 Weeks, 1 Days Container: Reel | 5003 |
|
$0.4712 / $0.6546 | Buy Now |
|
DISTI #
IRF7832PBFCT-ND
|
DigiKey | MOSFET N-CH 30V 20A 8SO Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
25280 In Stock |
|
$0.4116 / $1.1900 | Buy Now |
|
DISTI #
IRF7832TRPBF
|
Avnet Americas | Power MOSFET, N Channel, 30 V, 20 A, 0.0031 ohm, SOIC, Surface Mount - Tape and Reel (Alt: IRF7832TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel | 8000 |
|
$0.3147 / $0.3310 | Buy Now |
|
DISTI #
IRF7832TRPBF
|
Avnet Americas | Power MOSFET, N Channel, 30 V, 20 A, 0.0031 ohm, SOIC, Surface Mount - Tape and Reel (Alt: IRF7832TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$0.3128 / $0.3346 | Buy Now |
|
DISTI #
942-IRF7832TRPBF
|
Mouser Electronics | MOSFETs MOSFT 30V 20A 4mOhm 34nC RoHS: Compliant | 11803 |
|
$0.4200 / $0.9700 | Buy Now |
|
DISTI #
E02:0323_00176001
|
Arrow Electronics | Trans MOSFET N-CH 30V 20A 8-Pin SOIC N T/R RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks Date Code: 2507 | Europe - 12000 |
|
$0.4144 | Buy Now |
|
DISTI #
V36:1790_13890412
|
Arrow Electronics | Trans MOSFET N-CH 30V 20A 8-Pin SOIC N T/R RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks Date Code: 2404 | Americas - 8000 |
|
$0.3512 / $0.3533 | Buy Now |
|
DISTI #
V72:2272_13890412
|
Arrow Electronics | Trans MOSFET N-CH 30V 20A 8-Pin SOIC N T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2337 Container: Cut Strips | Americas - 2898 |
|
$0.3666 / $0.5588 | Buy Now |
|
DISTI #
E32:1076_00176001
|
Arrow Electronics | Trans MOSFET N-CH 30V 20A 8-Pin SOIC N T/R RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 12 Weeks Date Code: 2503 | Europe - 2500 |
|
$0.4144 / $0.4532 | Buy Now |
Part Details for IRF7832TRPBF
IRF7832TRPBF CAD Models
IRF7832TRPBF Part Data Attributes
|
|
IRF7832TRPBF
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IRF7832TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, SOP-8
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 260 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.004 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 450 pF | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 155 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 2.5 W | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7832TRPBF
This table gives cross-reference parts and alternative options found for IRF7832TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7832TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF7862TRPBF | Infineon Technologies AG | $0.9186 | Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET | IRF7832TRPBF vs IRF7862TRPBF |
| IRF7832 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | IRF7832TRPBF vs IRF7832 |
| IRF7832TR | International Rectifier | Check for Price | Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | IRF7832TRPBF vs IRF7832TR |
| IRF7832PBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | IRF7832TRPBF vs IRF7832PBF |
| IRF7832TR | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | IRF7832TRPBF vs IRF7832TR |
| IRF7832 | International Rectifier | Check for Price | Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | IRF7832TRPBF vs IRF7832 |
| NTMFS4935NT1G | onsemi | Check for Price | Single N-Channel Power MOSFET 30V, 93A, 3.2mΩ, DFN5 5X6, 1.27P (SO 8FL), 1500-REEL | IRF7832TRPBF vs NTMFS4935NT1G |
| NTMFS4935NT3G | onsemi | Check for Price | Single N-Channel Power MOSFET 30V, 93A, 3.2mΩ, DFN5 5X6, 1.27P (SO 8FL), 5000-REEL | IRF7832TRPBF vs NTMFS4935NT3G |
| IRF7832TRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | IRF7832TRPBF vs IRF7832TRPBF |
| IRF7832PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | IRF7832TRPBF vs IRF7832PBF |
IRF7832TRPBF Frequently Asked Questions (FAQ)
-
The maximum operating temperature range for the IRF7832TRPBF is -55°C to 175°C.
-
To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
-
The recommended gate drive voltage for the IRF7832TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
-
Yes, the IRF7832TRPBF is suitable for switching applications due to its low RDS(on) and high switching speed.
-
Handle the device by the body, use an anti-static wrist strap, and store the device in an anti-static bag to prevent ESD damage.