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Part Details for IRF7821PBF by Infineon Technologies AG
Results Overview of IRF7821PBF by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF7821PBF Information
IRF7821PBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF7821PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SP001566368
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EBV Elektronik | Trans MOSFET NCH 30V 136A 8Pin SOIC (Alt: SP001566368) RoHS: Compliant Min Qty: 3800 Package Multiple: 3800 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Win Source Electronics | MOSFET N-CH 30V 13.6A 8-SOIC | 16010 |
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$0.3850 / $0.4973 | Buy Now |
Part Details for IRF7821PBF
IRF7821PBF CAD Models
IRF7821PBF Part Data Attributes
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IRF7821PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF7821PBF
Infineon Technologies AG
Power Field-Effect Transistor, 13.6A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 44 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 13.6 A | |
| Drain-source On Resistance-Max | 0.0091 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 110 pF | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 155 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7821PBF
This table gives cross-reference parts and alternative options found for IRF7821PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7821PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF7821TR | International Rectifier | Check for Price | Power Field-Effect Transistor, 13.6A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | IRF7821PBF vs IRF7821TR |
| IRF7821GPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 13.6A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 | IRF7821PBF vs IRF7821GPBF |
| FDS6680A-SBBI002 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | IRF7821PBF vs FDS6680A-SBBI002 |
| FDS6680A-NBBI007A | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | IRF7821PBF vs FDS6680A-NBBI007A |
| FDS6680A-NF073 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | IRF7821PBF vs FDS6680A-NF073 |
| UPC8026G-S08-R | Unisonic Technologies Co Ltd | Check for Price | Transistor | IRF7821PBF vs UPC8026G-S08-R |
IRF7821PBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF7821PBF is -55°C to 175°C.
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To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within the recommended voltage and current ratings.
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The recommended gate drive voltage for the IRF7821PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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Yes, the IRF7821PBF is suitable for switching applications due to its low RDS(on) and high switching speed. However, ensure proper gate drive and layout to minimize switching losses.
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Use a suitable voltage regulator and overvoltage protection circuit, and consider adding overcurrent protection devices such as fuses or current sensors to prevent damage to the device.