Part Details for IRF7759L2TRPBF by International Rectifier
Results Overview of IRF7759L2TRPBF by International Rectifier
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF7759L2TRPBF Information
IRF7759L2TRPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF7759L2TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Transistors | 880 |
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RFQ |
Part Details for IRF7759L2TRPBF
IRF7759L2TRPBF CAD Models
IRF7759L2TRPBF Part Data Attributes
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IRF7759L2TRPBF
International Rectifier
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Datasheet
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IRF7759L2TRPBF
International Rectifier
Power Field-Effect Transistor, 26A I(D), 75V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-9
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-9 | |
| Pin Count | 9 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 257 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 75 V | |
| Drain Current-Max (ID) | 26 A | |
| Drain-source On Resistance-Max | 0.0023 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XBCC-N9 | |
| JESD-609 Code | e1 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 9 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 640 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7759L2TRPBF
This table gives cross-reference parts and alternative options found for IRF7759L2TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7759L2TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| AUIRF7759L2TR | International Rectifier | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | IRF7759L2TRPBF vs AUIRF7759L2TR |
| IRF7749L2TRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 33A I(D), 60V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-9 | IRF7759L2TRPBF vs IRF7749L2TRPBF |
IRF7759L2TRPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF7759L2TRPBF is -55°C to 150°C.
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The IRF7759L2TRPBF is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.
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The maximum current rating for the IRF7759L2TRPBF is 195A, but this is dependent on the specific application and operating conditions.
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No, the IRF7759L2TRPBF is not a radiation-hardened device. It is not designed for use in high-radiation environments.
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The typical turn-on time for the IRF7759L2TRPBF is around 10-20ns, and the typical turn-off time is around 20-30ns, but this can vary depending on the specific application and operating conditions.