Part Details for IRF7504TRPBF by International Rectifier
Results Overview of IRF7504TRPBF by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRF7504TRPBF Information
IRF7504TRPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRF7504TRPBF
IRF7504TRPBF CAD Models
IRF7504TRPBF Part Data Attributes
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IRF7504TRPBF
International Rectifier
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Datasheet
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IRF7504TRPBF
International Rectifier
Power Field-Effect Transistor, 1.7A I(D), 20V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 1.7 A | |
| Drain-source On Resistance-Max | 0.27 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 9.6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7504TRPBF
This table gives cross-reference parts and alternative options found for IRF7504TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7504TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRF7504 | International Rectifier | Check for Price | Power Field-Effect Transistor, 1.7A I(D), 20V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 | IRF7504TRPBF vs IRF7504 |
| IRF7504TRPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 1.7A I(D), 20V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 | IRF7504TRPBF vs IRF7504TRPBF |
| IRF7504TR | International Rectifier | Check for Price | Power Field-Effect Transistor, 1.7A I(D), 20V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 | IRF7504TRPBF vs IRF7504TR |
| IRF7504PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 1.7A I(D), 20V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-8 | IRF7504TRPBF vs IRF7504PBF |
IRF7504TRPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF7504TRPBF is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance and reliability.
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To ensure proper thermal management, make sure to provide a heat sink with a thermal resistance of less than 1°C/W, and ensure good thermal contact between the device and the heat sink. Also, keep the ambient temperature below 50°C and avoid hot spots on the PCB.
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The recommended gate drive voltage for the IRF7504TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V. However, it's recommended to use a gate drive voltage of 12V to ensure optimal switching performance.
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Yes, the IRF7504TRPBF is suitable for high-frequency switching applications up to 1MHz. However, it's essential to consider the device's switching losses, gate charge, and parasitic inductance when designing the circuit.
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To protect the IRF7504TRPBF from overvoltage and overcurrent, use a voltage clamp or a zener diode to limit the voltage, and consider adding a current sense resistor and a fuse to detect and respond to overcurrent conditions.