Part Details for IRF7504TR by International Rectifier
Results Overview of IRF7504TR by International Rectifier
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF7504TR Information
IRF7504TR by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF7504TR
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Quest Components | 1.7 A, 20 V, 0.27 OHM, 2 CHANNEL, P-CHANNEL, SI, POWER, MOSFET | 3613 |
|
$0.1500 / $0.3600 | Buy Now |
Part Details for IRF7504TR
IRF7504TR CAD Models
IRF7504TR Part Data Attributes
|
|
IRF7504TR
International Rectifier
Buy Now
Datasheet
|
Compare Parts:
IRF7504TR
International Rectifier
Power Field-Effect Transistor, 1.7A I(D), 20V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8
|
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 1.7 A | |
| Drain-source On Resistance-Max | 0.27 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e0 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.39 W | |
| Pulsed Drain Current-Max (IDM) | 9.6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7504TR
This table gives cross-reference parts and alternative options found for IRF7504TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7504TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF7504TRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 1.7A I(D), 20V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 | IRF7504TR vs IRF7504TRPBF |
IRF7504TR Frequently Asked Questions (FAQ)
-
The maximum operating temperature range for the IRF7504TR is -55°C to 175°C, but it's recommended to operate within -40°C to 150°C for optimal performance and reliability.
-
Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1°C/W, and ensuring good airflow around the device. The heat sink should be attached using a thermal interface material and screws or clips.
-
The recommended gate drive voltage for the IRF7504TR is between 10V and 15V, with a maximum gate-source voltage of ±20V. A higher gate drive voltage can improve switching performance, but may also increase power consumption.
-
Yes, the IRF7504TR is suitable for high-frequency switching applications up to 1MHz, but it's essential to consider the device's switching losses, gate charge, and layout parasitics to ensure reliable operation.
-
Overvoltage protection can be achieved using a voltage clamp or a zener diode, while overcurrent protection can be implemented using a current sense resistor and a comparator or a dedicated overcurrent protection IC.