Part Details for IRF7504TR by Infineon Technologies AG
Results Overview of IRF7504TR by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRF7504TR Information
IRF7504TR by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF7504TR
| Part # | Distributor | Description | Stock | Price | Buy | |
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Win Source Electronics | MOSFET 2P-CH 20V 1.7A MICRO8 | 10960 |
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$1.0427 / $1.5640 | Buy Now |
Part Details for IRF7504TR
IRF7504TR CAD Models
IRF7504TR Part Data Attributes
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IRF7504TR
Infineon Technologies AG
Buy Now
Datasheet
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IRF7504TR
Infineon Technologies AG
Power Field-Effect Transistor, 1.7A I(D), 20V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 1.7 A | |
| Drain-source On Resistance-Max | 0.27 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 9.6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IRF7504TR Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF7504TR is -55°C to 175°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 150°C for optimal performance and reliability.
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To ensure proper biasing, make sure to provide a stable voltage supply to the gate driver, and ensure the gate-source voltage (Vgs) is within the recommended range of 10V to 15V. Additionally, use a suitable gate resistor (Rg) to limit the gate current and prevent oscillations.
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For optimal thermal management, use a PCB with a thick copper layer (at least 2 oz) and ensure good thermal conductivity between the device and the heat sink. Use a heat sink with a thermal resistance of less than 1°C/W and apply a thermal interface material (TIM) with a thermal conductivity of at least 5 W/mK. Keep the PCB layout compact and symmetrical to minimize parasitic inductances and capacitances.
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Use a voltage clamp or a zener diode to protect the device from overvoltage conditions. For overcurrent protection, use a current sense resistor and a comparator to detect excessive current. Implement a shutdown circuit or a fault detection mechanism to disconnect the power supply in case of an overcurrent event.
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The IRF7504TR has an ESD rating of 2 kV (Human Body Model) and 150 V (Machine Model). Handle the device with ESD-protective equipment, such as wrist straps, mats, and bags. Avoid touching the device pins or exposing them to static electricity. Use an ESD-protected workstation and follow proper handling procedures to prevent damage.