Part Details for IRF7501TRPBF by Infineon Technologies AG
Results Overview of IRF7501TRPBF by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF7501TRPBF Information
IRF7501TRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF7501TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
39M3572
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Newark | Dual N Channel Mosfet, 20V, Micro8, Channel Type:N Channel, Drain Source Voltage Vds N Channel:20V, Drain Source Voltage Vds P Channel:20V, Continuous Drain Current Id N Channel:2.4A, Continuous Drain Current Id P Channel:2.4A Rohs Compliant: Yes |Infineon IRF7501TRPBF RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.2730 / $0.7400 | Buy Now |
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DISTI #
IRF7501TRPBF
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TME | Transistor: N-MOSFET x2, unipolar, 20V, 2.4A, 1.2W, SO8 Min Qty: 4000 | 0 |
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$0.2080 | RFQ |
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Cytech Systems Limited | MOSFET 2N-CH 20V 2.4A MICRO8 | 12000 |
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RFQ | |
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DISTI #
SP001575316
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EBV Elektronik | Transistor MOSFET Array Dual NCH 20V 24A 8Pin Micro8 TR (Alt: SP001575316) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 20V 2.4A 135m4.5V1.7A 1.25W 700mV MSOP-8 MOSFETs ROHS | 5 |
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$0.2927 / $0.5884 | Buy Now |
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Win Source Electronics | MOSFET 2N-CH 20V 2.4A MICRO8 | 22000 |
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$0.7300 / $1.0949 | Buy Now |
Part Details for IRF7501TRPBF
IRF7501TRPBF CAD Models
IRF7501TRPBF Part Data Attributes
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IRF7501TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF7501TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 2.4A I(D), 20V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | MICRO-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | ULTRA LOW RESISTANCE | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 2.4 A | |
| Drain-source On Resistance-Max | 0.135 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 19 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7501TRPBF
This table gives cross-reference parts and alternative options found for IRF7501TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7501TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF7501 | International Rectifier | Check for Price | Power Field-Effect Transistor, 2.4A I(D), 20V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 | IRF7501TRPBF vs IRF7501 |
IRF7501TRPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF7501TRPBF is -55°C to 175°C.
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To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
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The recommended gate drive voltage for the IRF7501TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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To protect the IRF7501TRPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a static-shielding bag or tube.
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The maximum allowable power dissipation for the IRF7501TRPBF is 125W, but this can be increased with proper heat sinking and thermal management.