Part Details for IRF7450PBF by International Rectifier
Results Overview of IRF7450PBF by International Rectifier
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF7450PBF Information
IRF7450PBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF7450PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 89 |
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RFQ | ||
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Quest Components | 2.5 A, 200 V, 0.17 OHM, N-CHANNEL, SI, POWER, MOSFET, MS-012AA | 71 |
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$1.1132 / $2.0240 | Buy Now |
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ComSIT USA | SMPS MOSFET Small Signal Field-Effect Transistor ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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Vyrian | Transistors | 986 |
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RFQ |
Part Details for IRF7450PBF
IRF7450PBF CAD Models
IRF7450PBF Part Data Attributes
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IRF7450PBF
International Rectifier
Buy Now
Datasheet
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IRF7450PBF
International Rectifier
Power Field-Effect Transistor, 2.5A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | SOIC | |
| Package Description | LEAD FREE, SO-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 230 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 2.5 A | |
| Drain-source On Resistance-Max | 0.17 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7450PBF
This table gives cross-reference parts and alternative options found for IRF7450PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7450PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF7450PBF | Infineon Technologies AG | $0.5222 | Power Field-Effect Transistor, 2.5A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | IRF7450PBF vs IRF7450PBF |
| IRF7450TR | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 2.5A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | IRF7450PBF vs IRF7450TR |
| IRF7450TRPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 2.5A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | IRF7450PBF vs IRF7450TRPBF |
| IRF7450TRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 2.5A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | IRF7450PBF vs IRF7450TRPBF |
IRF7450PBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF7450PBF is -55°C to 175°C.
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To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
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The maximum gate-source voltage that can be applied to the IRF7450PBF is ±20V.
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Yes, the IRF7450PBF is suitable for high-frequency switching applications up to 1 MHz. However, the device's performance and reliability may degrade at frequencies above 500 kHz.
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To protect the IRF7450PBF from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static bag or tube.