Part Details for IRF7416PBF by International Rectifier
Results Overview of IRF7416PBF by International Rectifier
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF7416PBF Information
IRF7416PBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF7416PBF
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 92 |
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RFQ | ||
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Quest Components | TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,10A I(D),SO | 4 |
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$1.6800 / $2.1000 | Buy Now |
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ComSIT USA | HEXFET POWER MOSFET Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 105 |
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$1.5000 / $2.3100 | Buy Now |
Part Details for IRF7416PBF
IRF7416PBF CAD Models
IRF7416PBF Part Data Attributes
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IRF7416PBF
International Rectifier
Buy Now
Datasheet
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IRF7416PBF
International Rectifier
Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | SOIC | |
Package Description | LEAD FREE, SO-8 | |
Pin Count | 8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 370 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 0.02 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 2.5 W | |
Pulsed Drain Current-Max (IDM) | 45 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF7416PBF
This table gives cross-reference parts and alternative options found for IRF7416PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7416PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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IRF7416 | International Rectifier | Check for Price | Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8, 8 PIN | IRF7416PBF vs IRF7416 |
IRF7416TR | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | IRF7416PBF vs IRF7416TR |
IRF7416 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8, 8 PIN | IRF7416PBF vs IRF7416 |
IRF7416TR | International Rectifier | Check for Price | Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8, 8 PIN | IRF7416PBF vs IRF7416TR |
IRF7416TRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | IRF7416PBF vs IRF7416TRPBF |
IRF7416GPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 | IRF7416PBF vs IRF7416GPBF |
IRF7416PBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF7416PBF is -55°C to 175°C.
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Yes, the IRF7416PBF is qualified to the automotive AEC-Q101 standard, making it suitable for high-reliability applications.
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To ensure proper cooling, make sure to provide a sufficient heat sink and thermal interface material, and follow the recommended PCB layout and thermal design guidelines.
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The maximum allowable voltage for the IRF7416PBF is 500V, but it's recommended to operate within the specified maximum voltage rating of 400V to ensure reliable operation.
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Yes, the IRF7416PBF is suitable for switching power supply applications due to its low on-state resistance and high switching speed.