Datasheets
IRF7416PBF by:

Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

Part Details for IRF7416PBF by International Rectifier

Results Overview of IRF7416PBF by International Rectifier

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

IRF7416PBF Information

IRF7416PBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF7416PBF

Part # Distributor Description Stock Price Buy
Bristol Electronics   92
RFQ
Quest Components TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,10A I(D),SO 4
  • 1 $2.1000
  • 3 $1.6800
$1.6800 / $2.1000 Buy Now
ComSIT USA HEXFET POWER MOSFET Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA ECCN: EAR99 RoHS: Compliant Stock DE - 130
Stock ES - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 105
  • 1 $2.3100
  • 100 $1.7300
  • 1,000 $1.5000
$1.5000 / $2.3100 Buy Now

Part Details for IRF7416PBF

IRF7416PBF CAD Models

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IRF7416PBF Part Data Attributes

IRF7416PBF International Rectifier
Buy Now Datasheet
Compare Parts:
IRF7416PBF International Rectifier Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code SOIC
Package Description LEAD FREE, SO-8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 370 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.02 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Pulsed Drain Current-Max (IDM) 45 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF7416PBF

This table gives cross-reference parts and alternative options found for IRF7416PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7416PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF7416 International Rectifier Check for Price Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8, 8 PIN IRF7416PBF vs IRF7416
IRF7416TR Infineon Technologies AG Check for Price Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 IRF7416PBF vs IRF7416TR
IRF7416 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8, 8 PIN IRF7416PBF vs IRF7416
IRF7416TR International Rectifier Check for Price Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8, 8 PIN IRF7416PBF vs IRF7416TR
IRF7416TRPBF International Rectifier Check for Price Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 IRF7416PBF vs IRF7416TRPBF
IRF7416GPBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 IRF7416PBF vs IRF7416GPBF
Part Number Manufacturer Composite Price Description Compare
IRF7416GPBF International Rectifier Check for Price Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 IRF7416PBF vs IRF7416GPBF
FDS4935A Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 7A I(D), 30V, 0.023ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 IRF7416PBF vs FDS4935A
IRF7205PBF International Rectifier Check for Price Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 IRF7416PBF vs IRF7205PBF
IRF7306PBF International Rectifier Check for Price Power Field-Effect Transistor, 3.6A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 IRF7416PBF vs IRF7306PBF
IRF7314TRPBF International Rectifier Check for Price Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE PACKAGE-8 IRF7416PBF vs IRF7314TRPBF
IRF7403TRPBF International Rectifier Check for Price Power Field-Effect Transistor, 6.7A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, IRF7416PBF vs IRF7403TRPBF
MMDF2N02E Motorola Semiconductor Products Check for Price Power Field-Effect Transistor, 3.6A I(D), 25V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 751-05, SOIC-8 IRF7416PBF vs MMDF2N02E
IRF7404PBF-1 International Rectifier Check for Price Power Field-Effect Transistor, IRF7416PBF vs IRF7404PBF-1
MMDF2N02E Motorola Mobility LLC Check for Price 3.6A, 25V, 0.1ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, CASE 751-05, SOIC-8 IRF7416PBF vs MMDF2N02E
IRF7404TRPBF-1 International Rectifier Check for Price Power Field-Effect Transistor, IRF7416PBF vs IRF7404TRPBF-1

IRF7416PBF Related Parts

IRF7416PBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF7416PBF is -55°C to 175°C.

  • Yes, the IRF7416PBF is qualified to the automotive AEC-Q101 standard, making it suitable for high-reliability applications.

  • To ensure proper cooling, make sure to provide a sufficient heat sink and thermal interface material, and follow the recommended PCB layout and thermal design guidelines.

  • The maximum allowable voltage for the IRF7416PBF is 500V, but it's recommended to operate within the specified maximum voltage rating of 400V to ensure reliable operation.

  • Yes, the IRF7416PBF is suitable for switching power supply applications due to its low on-state resistance and high switching speed.

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