Part Details for IRF7413GPBF by International Rectifier
Results Overview of IRF7413GPBF by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (8 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRF7413GPBF Information
IRF7413GPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRF7413GPBF
IRF7413GPBF CAD Models
IRF7413GPBF Part Data Attributes
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IRF7413GPBF
International Rectifier
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Datasheet
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IRF7413GPBF
International Rectifier
Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | SOIC | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Pin Count | 8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH RELIABILITY, ULTRA LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 260 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 13 A | |
| Drain-source On Resistance-Max | 0.011 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 58 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7413GPBF
This table gives cross-reference parts and alternative options found for IRF7413GPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7413GPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF7413Z | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | IRF7413GPBF vs IRF7413Z |
| IRF7413GPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 | IRF7413GPBF vs IRF7413GPBF |
| IRF7413TRPBF-1 | International Rectifier | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | IRF7413GPBF vs IRF7413TRPBF-1 |
| IRF7413ZPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | IRF7413GPBF vs IRF7413ZPBF |
| IRF7413TRPBF-1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET, | IRF7413GPBF vs IRF7413TRPBF-1 |
| IRF7413Z | International Rectifier | Check for Price | Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | IRF7413GPBF vs IRF7413Z |
| IRF7413PBF-1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | IRF7413GPBF vs IRF7413PBF-1 |
| IRF7413 | International Rectifier | Check for Price | Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | IRF7413GPBF vs IRF7413 |