Datasheets
IRF7410TRPBF by:

Power Field-Effect Transistor, 16A I(D), 20V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

Part Details for IRF7410TRPBF by International Rectifier

Results Overview of IRF7410TRPBF by International Rectifier

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Applications Energy and Power Systems Renewable Energy

IRF7410TRPBF Information

IRF7410TRPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF7410TRPBF

Part # Distributor Description Stock Price Buy
Bristol Electronics   3892
RFQ
Bristol Electronics   652
RFQ
Bristol Electronics   35
RFQ
Vyrian Transistors 15826
RFQ

Part Details for IRF7410TRPBF

IRF7410TRPBF CAD Models

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IRF7410TRPBF Part Data Attributes

IRF7410TRPBF International Rectifier
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IRF7410TRPBF International Rectifier Power Field-Effect Transistor, 16A I(D), 20V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code SOIC
Package Description SO-8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 16 A
Drain-source On Resistance-Max 0.007 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Pulsed Drain Current-Max (IDM) 65 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF7410TRPBF

This table gives cross-reference parts and alternative options found for IRF7410TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7410TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF7410GTRPBF International Rectifier Check for Price Power Field-Effect Transistor, 16A I(D), 12V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE, ROHS AND REACH COMPLIANT, SOP-8 IRF7410TRPBF vs IRF7410GTRPBF
Part Number Manufacturer Composite Price Description Compare
IRF7410GTRPBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 16A I(D), 12V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, HALOGEN FREE, ROHS AND REACH COMPLIANT, SOP-8 IRF7410TRPBF vs IRF7410GTRPBF
IRF7410PBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 16A I(D), 12V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 IRF7410TRPBF vs IRF7410PBF
IRF7410TR International Rectifier Check for Price Power Field-Effect Transistor, 16A I(D), 12V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 IRF7410TRPBF vs IRF7410TR
IRF7410 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 16A I(D), 12V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 IRF7410TRPBF vs IRF7410
IRF7410GPBF International Rectifier Check for Price Power Field-Effect Transistor, 16A I(D), 12V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 IRF7410TRPBF vs IRF7410GPBF
IRF7410PBF International Rectifier Check for Price Power Field-Effect Transistor, 16A I(D), 12V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 IRF7410TRPBF vs IRF7410PBF
IRF7410PBF-1 International Rectifier Check for Price Power Field-Effect Transistor IRF7410TRPBF vs IRF7410PBF-1
IRF7410PBF-1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET IRF7410TRPBF vs IRF7410PBF-1
IRF7410TRPBF-1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 16A I(D), 12V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 IRF7410TRPBF vs IRF7410TRPBF-1

IRF7410TRPBF Related Parts

IRF7410TRPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF7410TRPBF is -55°C to 175°C.

  • To ensure reliability, ensure proper thermal management, use a suitable heat sink, and follow the recommended PCB layout and assembly guidelines.

  • The maximum allowable voltage for the IRF7410TRPBF is 100V.

  • Handle the device by the body, use an anti-static wrist strap, and store the device in an anti-static bag or container to prevent ESD damage.

  • The recommended gate drive voltage for the IRF7410TRPBF is 10V to 15V.

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