Part Details for IRF740STRRPBF by Vishay Siliconix
Results Overview of IRF740STRRPBF by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRF740STRRPBF Information
IRF740STRRPBF by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF740STRRPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF740STRRPBFCT-ND
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DigiKey | MOSFET N-CH 400V 10A D2PAK Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Temporarily Out of Stock |
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$1.2488 / $3.7700 | Buy Now |
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Vyrian | Transistors | 19 |
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RFQ |
Part Details for IRF740STRRPBF
IRF740STRRPBF CAD Models
IRF740STRRPBF Part Data Attributes
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IRF740STRRPBF
Vishay Siliconix
Buy Now
Datasheet
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IRF740STRRPBF
Vishay Siliconix
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | D2PAK | |
Package Description | ROHS COMPLIANT, TO-263, D2PAK-3 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 520 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 400 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 0.55 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
IRF740STRRPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF740STRRPBF is -55°C to 175°C.
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The IRF740STRRPBF is a logic-level MOSFET, which means it can be driven directly by a microcontroller or other low-voltage logic device.
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The maximum current rating for the IRF740STRRPBF is 10A, but this can be affected by the operating temperature and other factors.
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Yes, the IRF740STRRPBF is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
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The IRF740STRRPBF comes in a SO-8 (Small Outline 8-pin) package.