Datasheets
IRF740STRRPBF by:

Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3

Part Details for IRF740STRRPBF by Vishay Siliconix

Results Overview of IRF740STRRPBF by Vishay Siliconix

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy

IRF740STRRPBF Information

IRF740STRRPBF by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF740STRRPBF

Part # Distributor Description Stock Price Buy
DISTI # IRF740STRRPBFCT-ND
DigiKey MOSFET N-CH 400V 10A D2PAK Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) Temporarily Out of Stock
  • 1 $3.7700
  • 800 $1.2648
  • 1,600 $1.2517
  • 2,400 $1.2488
$1.2488 / $3.7700 Buy Now
Vyrian Transistors 19
RFQ

Part Details for IRF740STRRPBF

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IRF740STRRPBF Part Data Attributes

IRF740STRRPBF Vishay Siliconix
Buy Now Datasheet
Compare Parts:
IRF740STRRPBF Vishay Siliconix Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer VISHAY SILICONIX
Part Package Code D2PAK
Package Description ROHS COMPLIANT, TO-263, D2PAK-3
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 520 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.55 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

IRF740STRRPBF Related Parts

IRF740STRRPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF740STRRPBF is -55°C to 175°C.

  • The IRF740STRRPBF is a logic-level MOSFET, which means it can be driven directly by a microcontroller or other low-voltage logic device.

  • The maximum current rating for the IRF740STRRPBF is 10A, but this can be affected by the operating temperature and other factors.

  • Yes, the IRF740STRRPBF is suitable for high-frequency switching applications due to its low gate charge and fast switching times.

  • The IRF740STRRPBF comes in a SO-8 (Small Outline 8-pin) package.

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