Part Details for IRF740S by Vishay Intertechnologies
Results Overview of IRF740S by Vishay Intertechnologies
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
IRF740S Information
IRF740S by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF740S
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF740S
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Avnet Americas | MOSFET N-CHANNEL 400V - Bulk (Alt: IRF740S) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 111 Weeks, 0 Days Container: Bulk | 0 |
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RFQ | |
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ComSIT USA | Electronic Component RoHS: Compliant |
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RFQ |
Part Details for IRF740S
IRF740S CAD Models
IRF740S Part Data Attributes
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IRF740S
Vishay Intertechnologies
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Datasheet
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IRF740S
Vishay Intertechnologies
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Part Package Code | D2PAK | |
| Package Description | TO-263, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.55 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF740S
This table gives cross-reference parts and alternative options found for IRF740S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF740S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRF740SPBF | Vishay Intertechnologies | $1.3877 | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | IRF740S vs IRF740SPBF |
| IRF740STRLPBF | Vishay Intertechnologies | $1.8985 | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | IRF740S vs IRF740STRLPBF |
| IRF740STRRPBF | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | IRF740S vs IRF740STRRPBF |
IRF740S Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF740S is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the boundaries of the maximum ratings and ensure that the junction temperature remains below 150°C.
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To calculate the thermal resistance of the IRF740S in a specific application, you need to consider the device's junction-to-case thermal resistance (RθJC), case-to-ambient thermal resistance (RθCA), and the thermal interface material's thermal resistance (RθTI). You can use the following equation: RθJA = RθJC + RθCA + RθTI. The datasheet provides the RθJC value, and you can estimate the other values based on your application's thermal design.
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The recommended gate drive voltage for the IRF740S is typically between 10V and 15V, depending on the application's requirements. However, it's essential to ensure that the gate drive voltage does not exceed the maximum gate-source voltage rating (VGS) of ±20V to prevent damage to the device.
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The IRF740S is a power MOSFET designed for high-power applications, but it may not be suitable for high-frequency switching applications due to its relatively high gate charge (Qg) and output capacitance (Coss). You should carefully evaluate the device's switching characteristics and ensure that it meets your application's requirements.
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To ensure the reliability of the IRF740S in a high-temperature environment, you should follow proper thermal design and management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow. Additionally, you should consider the device's derating factors, such as the maximum junction temperature and power dissipation, to prevent overheating and premature failure.