Part Details for IRF740R by Rochester Electronics LLC
Results Overview of IRF740R by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF740R Information
IRF740R by Rochester Electronics LLC is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRF740R
IRF740R CAD Models
IRF740R Part Data Attributes
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IRF740R
Rochester Electronics LLC
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Datasheet
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IRF740R
Rochester Electronics LLC
10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Reach Compliance Code | unknown | |
| Avalanche Energy Rating (Eas) | 520 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.55 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | NOT SPECIFIED | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF740R
This table gives cross-reference parts and alternative options found for IRF740R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF740R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| RFD16N06LE | Rochester Electronics LLC | Check for Price | 16A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | IRF740R vs RFD16N06LE |
| SSP4N90A | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 4A I(D), 900V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IRF740R vs SSP4N90A |
| FQPF10N60C | Rochester Electronics LLC | Check for Price | 9.5A, 600V, 0.73ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, TO-220F, 3 PIN | IRF740R vs FQPF10N60C |
| IPB04N03LAG | Rochester Electronics LLC | Check for Price | 80A, 25V, 0.0064ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | IRF740R vs IPB04N03LAG |
| SPP16N50C3 | Rochester Electronics LLC | Check for Price | 16A, 500V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | IRF740R vs SPP16N50C3 |
| SPI11N65C3 | Rochester Electronics LLC | Check for Price | 11A, 650V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | IRF740R vs SPI11N65C3 |
| NTD4806N1G | onsemi | Check for Price | 11A, 30V, 0.0094ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, CASE 369D-01, DPAK-3 | IRF740R vs NTD4806N1G |
| SPU21N05L | Siemens | Check for Price | Power Field-Effect Transistor, 21A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IRF740R vs SPU21N05L |
| IRF830R | Rochester Electronics LLC | Check for Price | 4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF740R vs IRF830R |
| SSH10N80A | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 10A I(D), 800V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | IRF740R vs SSH10N80A |