Part Details for IRF740R by Harris Semiconductor
Results Overview of IRF740R by Harris Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
IRF740R Information
IRF740R by Harris Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF740R
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 10A, 400V, 0.55ohm, N-Channel, POWER MOSFET RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 46 |
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$1.0400 / $1.3000 | Buy Now |
Part Details for IRF740R
IRF740R CAD Models
IRF740R Part Data Attributes
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IRF740R
Harris Semiconductor
Buy Now
Datasheet
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IRF740R
Harris Semiconductor
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 520 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.55 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 125 W | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 111 ns | |
| Turn-on Time-Max (ton) | 62 ns |
Alternate Parts for IRF740R
This table gives cross-reference parts and alternative options found for IRF740R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF740R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF740R | Rochester Electronics LLC | Check for Price | 10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF740R vs IRF740R |
IRF740R Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF740R is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance.
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To ensure the IRF740R is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and a gate current (Ig) of at least 10mA. This will minimize the on-state resistance (Rds(on)) and ensure maximum current handling.
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The recommended gate resistor value for the IRF740R is between 10Ω to 100Ω, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI) and ringing, but may increase the turn-on time.
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Yes, the IRF740R can be used in high-frequency switching applications up to 1MHz, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure proper PCB layout and decoupling to minimize ringing and EMI.
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To protect the IRF740R from overvoltage and overcurrent, use a voltage clamp or a zener diode to limit the voltage across the device, and consider adding a current sense resistor and a fuse or a current limiter to prevent excessive current.