Datasheets
IRF740A by:
Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

Part Details for IRF740A by Fairchild Semiconductor Corporation

Results Overview of IRF740A by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy

IRF740A Information

IRF740A by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF740A

Part # Distributor Description Stock Price Buy
Rochester Electronics 10A, 400V, 0.55ohm, N-Channel Power MOSFET, TO-220AB RoHS: Not Compliant Status: Obsolete Min Qty: 1 18
  • 100 $1.1100
  • 500 $0.9988
  • 1,000 $0.9211
  • 10,000 $0.8213
  • 100,000 $0.6881
$0.6881 / $1.1100 Buy Now
ComSIT USA Electronic Component RoHS: Not Compliant Stock DE - 0
Stock ES - 77
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for IRF740A

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IRF740A Part Data Attributes

IRF740A Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
IRF740A Fairchild Semiconductor Corporation Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-220AB
Package Description TO-220AB, 3 PIN
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 630 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.55 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF740A

This table gives cross-reference parts and alternative options found for IRF740A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF740A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF740A Rochester Electronics LLC Check for Price 10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN IRF740A vs IRF740A
IRF740APBF International Rectifier Check for Price Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 IRF740A vs IRF740APBF
Part Number Manufacturer Composite Price Description Compare
IRF740APBF Vishay Intertechnologies $1.4068 Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 IRF740A vs IRF740APBF
IRF740A Samsung Semiconductor Check for Price Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN IRF740A vs IRF740A
IRF740A Vishay Siliconix Check for Price Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN IRF740A vs IRF740A
IRF740APBF Vishay Siliconix Check for Price Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN IRF740A vs IRF740APBF
IRF740A International Rectifier Check for Price Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRF740A vs IRF740A
IRF740A Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRF740A vs IRF740A

IRF740A Related Parts

IRF740A Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF740A is -55°C to 175°C.

  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 4V for optimal performance. Additionally, the drain-source voltage (Vds) should be within the recommended range of 0V to 400V.

  • The maximum continuous drain current (Id) for the IRF740A is 10A, and the maximum pulsed drain current is 20A.

  • To protect the IRF740A from overvoltage and overcurrent conditions, use a voltage regulator or a voltage clamp to limit the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.

  • The recommended gate resistor value for the IRF740A is between 1kΩ and 10kΩ, depending on the specific application and switching frequency.

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