Part Details for IRF7404TR by International Rectifier
Results Overview of IRF7404TR by International Rectifier
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF7404TR Information
IRF7404TR by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF7404TR
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 4000 |
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Quest Components | TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,5.3A I(D),SO | 1255 |
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$0.6325 / $1.3750 | Buy Now |
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ComSIT USA | HEXFET POWER MOSFET Power Field-Effect Transistor, 5.4A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA ECCN: EAR99 RoHS: Not Compliant |
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RFQ | |
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Win Source Electronics | 27600 |
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$0.2310 / $0.2984 | Buy Now |
Part Details for IRF7404TR
IRF7404TR CAD Models
IRF7404TR Part Data Attributes
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IRF7404TR
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF7404TR
International Rectifier
Power Field-Effect Transistor, 5.4A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC | |
| Part Package Code | SOIC | |
| Package Description | SO-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 6.7 A | |
| Drain-source On Resistance-Max | 0.04 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 340 pF | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation Ambient-Max | 2.5 W | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 27 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 165 ns | |
| Turn-on Time-Max (ton) | 36 ns |
Alternate Parts for IRF7404TR
This table gives cross-reference parts and alternative options found for IRF7404TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7404TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SI5457DC-T1-GE3 | Vishay Intertechnologies | $0.3683 | Power Field-Effect Transistor, 6A I(D), 20V, 0.036ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, 1206-8, CHIPFET-8 | IRF7404TR vs SI5457DC-T1-GE3 |
| IRF7404PBF | Infineon Technologies AG | $0.4298 | Power Field-Effect Transistor, 6.7A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | IRF7404TR vs IRF7404PBF |
| IRF7404TRPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 5.3A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | IRF7404TR vs IRF7404TRPBF |
| IRF7404QPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, | IRF7404TR vs IRF7404QPBF |
| IRF7404QPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 6.7A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 | IRF7404TR vs IRF7404QPBF |
| TSM9434CSRLG | Taiwan Semiconductor | Check for Price | Power Field-Effect Transistor, | IRF7404TR vs TSM9434CSRLG |
IRF7404TR Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF7404TR is -55°C to 175°C, but it's recommended to operate within -40°C to 150°C for optimal performance and reliability.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1°C/W, and ensuring good airflow around the device. Additionally, the PCB layout should be designed to minimize thermal resistance and ensure good heat dissipation.
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The recommended gate drive voltage for the IRF7404TR is between 10V and 15V, with a maximum gate-source voltage of ±20V. A higher gate drive voltage can improve switching performance, but may also increase power consumption.
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Yes, the IRF7404TR is suitable for high-frequency switching applications up to 1MHz, but it's essential to consider the device's switching losses, gate charge, and parasitic capacitances when designing the circuit. Additionally, a proper gate drive circuit and layout are crucial to minimize ringing and ensure reliable operation.
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To protect the IRF7404TR from overvoltage and overcurrent, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, a current sense resistor and a fuse or a current limiter can be used to detect and limit excessive current.