Part Details for IRF7404QPBF by International Rectifier
Results Overview of IRF7404QPBF by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
IRF7404QPBF Information
IRF7404QPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF7404QPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 3040 |
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$0.6615 / $2.2050 | Buy Now | |
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ComSIT USA | HEXFET POWER MOSFET Power Field-Effect Transistor, 6.7A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA ECCN: EAR99 RoHS: Compliant |
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RFQ |
Part Details for IRF7404QPBF
IRF7404QPBF CAD Models
IRF7404QPBF Part Data Attributes
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IRF7404QPBF
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF7404QPBF
International Rectifier
Power Field-Effect Transistor, 6.7A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | SOIC | |
| Package Description | LEAD FREE, SOP-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 6.7 A | |
| Drain-source On Resistance-Max | 0.04 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 2 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 27 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7404QPBF
This table gives cross-reference parts and alternative options found for IRF7404QPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7404QPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SI5457DC-T1-GE3 | Vishay Intertechnologies | $0.3683 | Power Field-Effect Transistor, 6A I(D), 20V, 0.036ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, 1206-8, CHIPFET-8 | IRF7404QPBF vs SI5457DC-T1-GE3 |
| IRF7404PBF | Infineon Technologies AG | $0.4298 | Power Field-Effect Transistor, 6.7A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | IRF7404QPBF vs IRF7404PBF |
| IRF7404TRPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 5.3A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | IRF7404QPBF vs IRF7404TRPBF |
| IRF7404QPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, | IRF7404QPBF vs IRF7404QPBF |
| TSM9434CSRLG | Taiwan Semiconductor | Check for Price | Power Field-Effect Transistor, | IRF7404QPBF vs TSM9434CSRLG |
IRF7404QPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF7404QPBF is -55°C to 175°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 150°C for optimal performance and reliability.
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To ensure proper biasing, make sure to provide a stable voltage supply to the gate-source voltage (Vgs) within the recommended range of 2V to 4V. Additionally, ensure the drain-source voltage (Vds) is within the specified range of 30V to 400V, and the drain current (Id) is within the recommended range of 1A to 10A.
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For optimal thermal management, it's recommended to use a PCB with a thermal pad and a heat sink. Ensure the thermal pad is connected to a copper plane on the PCB to dissipate heat efficiently. Additionally, keep the PCB layout compact and avoid using vias or thermal reliefs under the device to minimize thermal resistance.
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To protect the IRF7404QPBF from overvoltage and overcurrent conditions, use a voltage regulator or a voltage clamp to limit the voltage supply to the recommended range. Additionally, use a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions. It's also recommended to use a gate driver with built-in overvoltage and overcurrent protection.
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The recommended gate drive voltage for the IRF7404QPBF is 10V to 15V, and the recommended gate drive current is 1A to 5A. However, the actual gate drive voltage and current may vary depending on the specific application and the required switching frequency.