Part Details for IRF7403PBF by Infineon Technologies AG
Results Overview of IRF7403PBF by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF7403PBF Information
IRF7403PBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF7403PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
IRF7403PBF-ND
|
DigiKey | MOSFET N-CH 30V 8.5A 8SO Lead time: 39 Weeks Container: Tube | Limited Supply - Call |
|
Buy Now | |
|
|
Win Source Electronics | MOSFET N-CH 30V 8.5A 8-SOIC | 5522 |
|
$1.0880 / $1.6320 | Buy Now |
Part Details for IRF7403PBF
IRF7403PBF CAD Models
IRF7403PBF Part Data Attributes
|
|
IRF7403PBF
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IRF7403PBF
Infineon Technologies AG
Power Field-Effect Transistor, 8.5A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 8.5 A | |
| Drain-source On Resistance-Max | 0.022 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.6 W | |
| Pulsed Drain Current-Max (IDM) | 34 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7403PBF
This table gives cross-reference parts and alternative options found for IRF7403PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7403PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| RF1K4909096 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 3.5A I(D), 12V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | IRF7403PBF vs RF1K4909096 |
| IRF8915 | International Rectifier | Check for Price | Power Field-Effect Transistor, 8.9A I(D), 20V, 0.0183ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | IRF7403PBF vs IRF8915 |
| FDS6961AZD84Z | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.09ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | IRF7403PBF vs FDS6961AZD84Z |
| HP4936DYT | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 5.8A I(D), 30V, 0.037ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IRF7403PBF vs HP4936DYT |
| FDS6961AZL99Z | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.09ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | IRF7403PBF vs FDS6961AZL99Z |
| PHN210T/T3 | Nexperia | Check for Price | Power Field-Effect Transistor | IRF7403PBF vs PHN210T/T3 |
| FDS6961AZS62Z | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.09ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | IRF7403PBF vs FDS6961AZS62Z |
| IRF7403TR | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 6.7A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | IRF7403PBF vs IRF7403TR |
| IRF7101TRPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, LEAD FREE, SO-8 | IRF7403PBF vs IRF7101TRPBF |
| FDS9953AD84Z | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 2.9A I(D), 30V, 0.13ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | IRF7403PBF vs FDS9953AD84Z |
IRF7403PBF Frequently Asked Questions (FAQ)
-
The maximum operating temperature range for the IRF7403PBF is -55°C to 175°C.
-
To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
-
The recommended gate drive voltage for the IRF7403PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
-
Yes, the IRF7403PBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
-
Handle the device with ESD-protective equipment, use an ESD-protective wrist strap, and ensure the device is stored in an ESD-protective package.