Part Details for IRF7401 by International Rectifier
Results Overview of IRF7401 by International Rectifier
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF7401 Information
IRF7401 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF7401
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 2228 |
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RFQ | ||
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Bristol Electronics | 43 |
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RFQ | ||
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,6.9A I(D),SO | 1004 |
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$0.3750 / $0.9000 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,6.9A I(D),SO | 421 |
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$0.6000 / $1.5000 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,6.9A I(D),SO | 396 |
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$0.6000 / $1.5000 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,6.9A I(D),SO | 58 |
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$0.9375 / $1.8750 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,6.9A I(D),SO | 10 |
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$4.4880 / $6.1200 | Buy Now |
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ComSIT USA | Electronic Component RoHS: Not Compliant |
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RFQ | |
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Chip 1 Exchange | INSTOCK | 370 |
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RFQ | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 107 |
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$0.5000 / $0.7700 | Buy Now |
Part Details for IRF7401
IRF7401 CAD Models
IRF7401 Part Data Attributes
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IRF7401
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF7401
International Rectifier
Power Field-Effect Transistor, 8.7A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | SOIC | |
| Package Description | SO-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 8.7 A | |
| Drain-source On Resistance-Max | 0.022 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.6 W | |
| Pulsed Drain Current-Max (IDM) | 35 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7401
This table gives cross-reference parts and alternative options found for IRF7401. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7401, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRF7401PBF | Infineon Technologies AG | $0.4534 | Power Field-Effect Transistor, 8.7A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | IRF7401 vs IRF7401PBF |
| IRF7401TR | International Rectifier | Check for Price | Power Field-Effect Transistor, 8.7A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | IRF7401 vs IRF7401TR |
| IRF7401TRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 8.7A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | IRF7401 vs IRF7401TRPBF |
| IRF7401PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 8.7A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | IRF7401 vs IRF7401PBF |
IRF7401 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF7401 is not explicitly stated in the datasheet, but it can be determined by consulting the International Rectifier application note AN-936, which provides SOA curves for the device.
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To ensure proper thermal management, the IRF7401 should be mounted on a heat sink with a thermal resistance of less than 1°C/W. The heat sink should be designed to dissipate the maximum expected power dissipation of the device, and the thermal interface material should be applied according to the manufacturer's recommendations.
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The recommended gate drive voltage for the IRF7401 is between 10V and 15V, with a maximum gate-source voltage of 20V. A higher gate drive voltage can improve switching performance, but may also increase power consumption and EMI.
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Yes, the IRF7401 can be used in high-frequency switching applications up to 1MHz, but the user should ensure that the device is properly snubbed to prevent ringing and oscillations. The user should also consider the device's switching losses and ensure that the heat sink is designed to dissipate the resulting heat.
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The IRF7401 is a commercial-grade device and may not meet the requirements for high-reliability or aerospace applications. For such applications, a radiation-hardened or high-reliability version of the device may be required, such as the IRF7401Q or IRF7401RH.