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Part Details for IRF7341TRPBF by Infineon Technologies AG
Results Overview of IRF7341TRPBF by Infineon Technologies AG
- Distributor Offerings: (15 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Automotive
Motor control systems
IRF7341TRPBF Information
IRF7341TRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF7341TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
19K8261
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Newark | Dual N Channel Mosfet, 55V, 4.7A, Channel Type:N Channel, Drain Source Voltage Vds N Channel:55V, Drain Source Voltage Vds P Channel:55V, Continuous Drain Current Id N Channel:4.7A, Continuous Drain Current Id P Channel:4.7A Rohs Compliant: Yes |Infineon IRF7341TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
IRF7341PBFCT-ND
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DigiKey | MOSFET 2N-CH 55V 4.7A 8SO Min Qty: 1 Lead time: 8 Weeks Container: Tape & Reel (TR), Cut Tape (CT), Digi-Reel® |
29595 In Stock |
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$0.2823 / $1.2800 | Buy Now |
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DISTI #
V36:1790_13889714
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Arrow Electronics | Trans MOSFET N-CH Si 55V 4.7A 8-Pin SOIC N T/R RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 8 Weeks Date Code: 2441 | Americas - 4000 |
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$0.2726 / $0.3144 | Buy Now |
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DISTI #
70017698
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RS | IRF7341TRPBF Dual N-channel MOSFET Transistor, 4.7 A, 55 V, 8-Pin SOIC Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
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$0.6300 / $0.7500 | RFQ |
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Future Electronics | Dual N-Channel 55V 0.065 Ohm 36 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 8 Weeks Container: Reel | 0Reel |
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$0.3450 / $0.3500 | Buy Now |
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Future Electronics | Dual N-Channel 55V 0.065 Ohm 36 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 8 Weeks Container: Reel | 0Reel |
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$0.3450 / $0.3500 | Buy Now |
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DISTI #
87328684
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Verical | Trans MOSFET N-CH Si 55V 4.7A 8-Pin SOIC N T/R RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Date Code: 2441 | Americas - 4000 |
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$0.2726 / $0.3144 | Buy Now |
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DISTI #
80560420
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Verical | Trans MOSFET N-CH Si 55V 4.7A 8-Pin SOIC N T/R RoHS: Compliant Min Qty: 89 Package Multiple: 1 Date Code: 2413 | Americas - 3786 |
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$0.4190 / $1.0600 | Buy Now |
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DISTI #
76475980
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Verical | Trans MOSFET N-CH Si 55V 4.7A 8-Pin SOIC N T/R RoHS: Compliant Min Qty: 93 Package Multiple: 1 Date Code: 2301 | Americas - 1687 |
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$0.7893 / $0.9231 | Buy Now |
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Rochester Electronics | IRF7341TRPBF - PLANAR 40<-<100V RoHS: Compliant Status: Active Min Qty: 1 | 264 |
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$0.3278 / $0.5287 | Buy Now |
Part Details for IRF7341TRPBF
IRF7341TRPBF CAD Models
IRF7341TRPBF Part Data Attributes
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IRF7341TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF7341TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 140 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 5.1 A | |
| Drain-source On Resistance-Max | 0.05 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 42 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7341TRPBF
This table gives cross-reference parts and alternative options found for IRF7341TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7341TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF7341QPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 | IRF7341TRPBF vs IRF7341QPBF |
| IRF7341UTRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MS-012AA, SOP-8 | IRF7341TRPBF vs IRF7341UTRPBF |
IRF7341TRPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF7341TRPBF is -55°C to 175°C.
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To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
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The recommended gate drive voltage for the IRF7341TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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Yes, the IRF7341TRPBF is suitable for high-frequency switching applications, but ensure the device is operated within its specified frequency range and follow proper PCB design guidelines to minimize parasitic inductance and capacitance.
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Handle the device with proper ESD precautions, such as using an ESD wrist strap or mat, and ensure the device is stored in an ESD-protected environment.