Part Details for IRF7314TRPBF by International Rectifier
Results Overview of IRF7314TRPBF by International Rectifier
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF7314TRPBF Information
IRF7314TRPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF7314TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 27 |
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RFQ | ||
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Quest Components | 5.3 A, 20 V, 0.058 OHM, 2 CHANNEL, P-CHANNEL, SI, POWER, MOSFET, MS-012AA | 21 |
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$0.7800 / $1.3000 | Buy Now |
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ComSIT USA | HEXFET POWER MOSFET Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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Vyrian | Transistors | 1609 |
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RFQ |
Part Details for IRF7314TRPBF
IRF7314TRPBF CAD Models
IRF7314TRPBF Part Data Attributes
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IRF7314TRPBF
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF7314TRPBF
International Rectifier
Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE PACKAGE-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | SOIC | |
| Package Description | LEAD FREE PACKAGE-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 150 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 5.3 A | |
| Drain-source On Resistance-Max | 0.058 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 21 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7314TRPBF
This table gives cross-reference parts and alternative options found for IRF7314TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7314TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF7314PBF | Infineon Technologies AG | $0.3913 | Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | IRF7314TRPBF vs IRF7314PBF |
| IRF7314 | International Rectifier | Check for Price | Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | IRF7314TRPBF vs IRF7314 |
| IRF7314Q | International Rectifier | Check for Price | Power Field-Effect Transistor, 5.2A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | IRF7314TRPBF vs IRF7314Q |
| IRF7314QPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 5.2A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 | IRF7314TRPBF vs IRF7314QPBF |
| IRF7314TRPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE PACKAGE-8 | IRF7314TRPBF vs IRF7314TRPBF |
IRF7314TRPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF7314TRPBF is -55°C to 150°C.
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The IRF7314TRPBF is a logic-level MOSFET, which means it can be driven directly by a microcontroller or other low-voltage logic device.
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The maximum gate-source voltage (Vgs) for the IRF7314TRPBF is ±20V.
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Yes, the IRF7314TRPBF is suitable for high-frequency switching applications up to 1MHz due to its low gate charge and fast switching times.
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Yes, the IRF7314TRPBF is a Pb-free (RoHS-compliant) device, making it suitable for use in environmentally friendly designs.