Part Details for IRF7313PBF by International Rectifier
Results Overview of IRF7313PBF by International Rectifier
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF7313PBF Information
IRF7313PBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF7313PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 288 |
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Bristol Electronics | 23 |
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Quest Components | 6.5 A, 30 V, 0.029 OHM, 2 CHANNEL, N-CHANNEL, SI, POWER, MOSFET, MS-012AA | 135 |
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$0.4365 / $0.7275 | Buy Now |
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Quest Components | 6.5 A, 30 V, 0.029 OHM, 2 CHANNEL, N-CHANNEL, SI, POWER, MOSFET, MS-012AA | 120 |
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$0.6675 / $1.3350 | Buy Now |
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ComSIT USA | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA ECCN: EAR99 RoHS: Compliant |
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NexGen Digital | 172 |
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RFQ |
Part Details for IRF7313PBF
IRF7313PBF CAD Models
IRF7313PBF Part Data Attributes
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IRF7313PBF
International Rectifier
Buy Now
Datasheet
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IRF7313PBF
International Rectifier
Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | SOIC | |
| Package Description | LEAD FREE, SO-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 82 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 6.5 A | |
| Drain-source On Resistance-Max | 0.029 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7313PBF
This table gives cross-reference parts and alternative options found for IRF7313PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7313PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRF7313TRPBF | Infineon Technologies AG | $0.3183 | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | IRF7313PBF vs IRF7313TRPBF |
| IRF7313 | International Rectifier | Check for Price | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | IRF7313PBF vs IRF7313 |
| IRF7313TR | International Rectifier | Check for Price | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | IRF7313PBF vs IRF7313TR |
| IRF7313 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | IRF7313PBF vs IRF7313 |
| IRF7313TRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | IRF7313PBF vs IRF7313TRPBF |
IRF7313PBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF7313PBF is -55°C to 175°C.
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Yes, the IRF7313PBF is qualified to automotive and industrial standards, making it suitable for high-reliability applications.
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To ensure proper biasing, follow the recommended gate-source voltage (Vgs) and drain-source voltage (Vds) ratings, and use a suitable gate driver circuit.
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The maximum allowable power dissipation for the IRF7313PBF is 125W, but this can be increased with proper heat sinking and thermal management.
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Yes, the IRF7313PBF is suitable for switching applications due to its low Rds(on) and high switching speed.