Part Details for IRF7311TR by Infineon Technologies AG
Results Overview of IRF7311TR by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF7311TR Information
IRF7311TR by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF7311TR
| Part # | Distributor | Description | Stock | Price | Buy | |
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Cytech Systems Limited | MOSFET 2N-CH 20V 6.6A 8SO | 1000 |
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RFQ | |
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Win Source Electronics | Generation V Technology | MOSFET 2N-CH 20V 6.6A 8-SOIC | 4217 |
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$0.6537 / $0.9794 | Buy Now |
Part Details for IRF7311TR
IRF7311TR CAD Models
IRF7311TR Part Data Attributes
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IRF7311TR
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF7311TR
Infineon Technologies AG
Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SO-8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 100 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 6.6 A | |
| Drain-source On Resistance-Max | 0.029 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 2 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 26 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7311TR
This table gives cross-reference parts and alternative options found for IRF7311TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7311TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF7311TR | International Rectifier | Check for Price | Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | IRF7311TR vs IRF7311TR |
| IRF7311PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | IRF7311TR vs IRF7311PBF |
| IRF7311TRPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | IRF7311TR vs IRF7311TRPBF |
| IRF7311 | International Rectifier | Check for Price | Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | IRF7311TR vs IRF7311 |
| MMDF4N01HD | Motorola Mobility LLC | Check for Price | 4A, 12V, 0.1ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, CASE 751-05, SOIC-8 | IRF7311TR vs MMDF4N01HD |
| MMDF4N01HDR2 | Rochester Electronics LLC | Check for Price | 5.2A, 20V, 0.045ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SO-8 | IRF7311TR vs MMDF4N01HDR2 |
| FDS8926A_NL | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 30V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | IRF7311TR vs FDS8926A_NL |
| IRF7301PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | IRF7311TR vs IRF7301PBF |
| IRF7301 | International Rectifier | Check for Price | Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | IRF7311TR vs IRF7301 |
| FDS8926A | Rochester Electronics LLC | Check for Price | 5.5A, 30V, 0.03ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SOIC-8 | IRF7311TR vs FDS8926A |