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Transistors / Power Field-Effect Transistors / IRF730SPBF
Datasheets
IRF730SPBF by:

Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, D2PAK-3

Part Details for IRF730SPBF by Vishay Intertechnologies

Results Overview of IRF730SPBF by Vishay Intertechnologies

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IRF730SPBF Information

IRF730SPBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF730SPBF

Part # Distributor Description Stock Price Buy
DISTI # 63J7381
Newark N Channel Mosfet, 400V, 5.5A, Smd-220, Channel Type:N Channel, Drain Source Voltage Vds:400V, Continuous Drain Current Id:5.5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay IRF730SPBF RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1,000 $1.2500
  • 2,500 $1.1300
$1.1300 / $1.2500 Buy Now
DISTI # IRF730SPBF
Avnet Americas MOSFET N-CHANNEL 400V - Tape and Reel (Alt: IRF730SPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks, 0 Days Container: Reel 0
  • 1,000 $0.9613
  • 2,000 $0.9459
  • 4,000 $0.9310
  • 6,000 $0.9155
  • 8,000 $0.9047
$0.9047 / $0.9613 Buy Now
DISTI # 844-IRF730SPBF
Mouser Electronics MOSFETs N-Chan 400V 5.5 Amp RoHS: Compliant 0
  • 1,000 $1.0400
  • 2,000 $1.0300
  • 5,000 $1.0200
$1.0200 / $1.0400 Order Now
DISTI # 11448622
Verical Trans MOSFET N-CH 400V 5.5A 3-Pin(2+Tab) TO-263AB Min Qty: 400 Package Multiple: 400 Americas - 400
  • 400 $0.7682
$0.7682 Buy Now
DISTI # IRF730SPBF
TME Transistor: N-MOSFET, unipolar, 400V, 3.5A, 74W, D2PAK,TO263 Min Qty: 1 148
  • 1 $0.9200
  • 10 $0.8400
  • 50 $0.7300
  • 250 $0.6700
  • 1,000 $0.6200
$0.6200 / $0.9200 Buy Now
ComSIT USA Power MOSFET Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB ECCN: EAR99 RoHS: Compliant Stock DE - 300
Stock ES - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # IRF730SPBF
EBV Elektronik MOSFET NCHANNEL 400V (Alt: IRF730SPBF) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 9 Weeks, 0 Days EBV - 1000
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 50 800
  • 150 $1.9400
  • 800 $1.7900
$1.7900 / $1.9400 Buy Now

Part Details for IRF730SPBF

IRF730SPBF CAD Models

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IRF730SPBF Part Data Attributes

Parametric Data
IRF730SPBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRF730SPBF Vishay Intertechnologies Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, D2PAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Part Package Code D2PAK
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 8 Weeks
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 290 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V
Drain Current-Max (ID) 5.5 A
Drain-source On Resistance-Max 1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 74 W
Pulsed Drain Current-Max (IDM) 22 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF730SPBF

This table gives cross-reference parts and alternative options found for IRF730SPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF730SPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF730SPBF Vishay Siliconix Check for Price Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SMD-220, 3 PIN IRF730SPBF vs IRF730SPBF
IRF730STRLPBF Vishay Siliconix Check for Price Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SMD-220, 3 PIN IRF730SPBF vs IRF730STRLPBF
Part Number Manufacturer Composite Price Description Compare
IRF730SPBF International Rectifier Check for Price Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 IRF730SPBF vs IRF730SPBF
IRF730S Motorola Semiconductor Products Check for Price Power Field-Effect Transistor, 4.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF730SPBF vs IRF730S
IRF730STRL Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, SMD-220, D2PAK-3 IRF730SPBF vs IRF730STRL
IRF730STRRPBF Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 IRF730SPBF vs IRF730STRRPBF
IRF730S Motorola Mobility LLC Check for Price 4.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB IRF730SPBF vs IRF730S
IRF730S Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN IRF730SPBF vs IRF730S
IRF730STRLPBF International Rectifier Check for Price Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 IRF730SPBF vs IRF730STRLPBF
IRF730S International Rectifier Check for Price Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN IRF730SPBF vs IRF730S

IRF730SPBF Related Parts

IRF730SPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF730SPBF is -55°C to 175°C.

  • The IRF730SPBF is a logic-level MOSFET, which means it can be driven by a logic signal (typically 3.3V or 5V) and does not require a high voltage to turn on.

  • The maximum current rating for the IRF730SPBF is 2.5A, but this can be affected by the operating temperature and other factors, so it's essential to check the datasheet for specific details.

  • The IRF730SPBF is a P-channel MOSFET, which means it is typically used as a high-side switch or load switch.

  • The typical turn-on and turn-off time for the IRF730SPBF is around 10-20ns, but this can vary depending on the specific application and operating conditions.

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