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Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF730APBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
38K2841
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Newark | Mosfet Transistor, N Channel, 5.5 A, 400 V, 1 Ohm, 10 V, 4.5 V Rohs Compliant: Yes |Vishay IRF730APBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 2746 |
|
$1.2000 / $2.2500 | Buy Now |
DISTI #
IRF730APBF
|
Avnet Americas | Trans MOSFET N-CH 400V 5.5A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: IRF730APBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Bulk | 0 |
|
RFQ | |
DISTI #
844-IRF730APBF
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Mouser Electronics | MOSFETs TO220 400V 5.5A N-CH MOSFET RoHS: Compliant | 1041 |
|
$0.7730 / $1.8500 | Buy Now |
DISTI #
V36:1790_09218633
|
Arrow Electronics | Trans MOSFET N-CH 400V 5.5A 3-Pin(3+Tab) TO-220AB Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2345 | Americas - 320 |
|
$0.7230 / $1.1684 | Buy Now |
DISTI #
V99:2348_09218633
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Arrow Electronics | Trans MOSFET N-CH 400V 5.5A 3-Pin(3+Tab) TO-220AB Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2209 | Americas - 71 |
|
$0.7856 / $0.9012 | Buy Now |
DISTI #
70078857
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RS | MOSFET, Power, N-Ch, VDSS 400V, RDS(ON) 1Ohm, ID 5.5A, TO-220AB, PD 74W, VGS+/-30V,-55C Min Qty: 1 Package Multiple: 1 Container: Bulk | 540 |
|
$1.4300 / $1.9100 | Buy Now |
DISTI #
78817320
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Verical | Trans MOSFET N-CH 400V 5.5A 3-Pin(3+Tab) TO-220AB Min Qty: 8 Package Multiple: 1 Date Code: 2345 | Americas - 320 |
|
$0.9285 / $1.8463 | Buy Now |
DISTI #
70391915
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Verical | Trans MOSFET N-CH 400V 5.5A 3-Pin(3+Tab) TO-220AB Min Qty: 8 Package Multiple: 1 Date Code: 2209 | Americas - 71 |
|
$0.9674 / $1.8463 | Buy Now |
DISTI #
IRF730APBF
|
TTI | MOSFETs TO220 400V 5.5A N-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 1000 In Stock |
|
$0.7600 / $0.8400 | Buy Now |
DISTI #
IRF730APBF
|
TME | Transistor: N-MOSFET, unipolar, 400V, 5.5A, Idm: 22A, 74W, TO220AB Min Qty: 1 | 0 |
|
$0.7500 / $1.5600 | RFQ |
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IRF730APBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRF730APBF
Vishay Intertechnologies
Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Part Package Code | TO-220AB | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 290 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 400 V | |
Drain Current-Max (ID) | 5.5 A | |
Drain-source On Resistance-Max | 1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 4 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 74 W | |
Pulsed Drain Current-Max (IDM) | 22 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
The maximum operating temperature range for the IRF730APBF is -55°C to 175°C.
Yes, the IRF730APBF is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.
The maximum drain-source voltage (Vds) rating for the IRF730APBF is 400V.
Yes, the IRF730APBF is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
No, the IRF730APBF is not a radiation-hardened device. It is not designed for use in high-radiation environments.