Part Details for IRF7306TR by International Rectifier
Results Overview of IRF7306TR by International Rectifier
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF7306TR Information
IRF7306TR by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF7306TR
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 3 A, 30 V, 0.1 OHM, 2 CHANNEL, P-CHANNEL, SI, POWER, MOSFET | 4531 |
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$0.2792 / $0.7614 | Buy Now |
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Rochester Electronics | HEXFET Power mosfet pbFree: No Status: Obsolete Min Qty: 1 | 15218 |
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$0.2867 / $0.4624 | Buy Now |
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ComSIT USA | HEXFET POWER MOSFET Power Field-Effect Transistor, 3A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET ECCN: EAR99 RoHS: Not Compliant |
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RFQ |
Part Details for IRF7306TR
IRF7306TR CAD Models
IRF7306TR Part Data Attributes
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IRF7306TR
International Rectifier
Buy Now
Datasheet
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IRF7306TR
International Rectifier
Power Field-Effect Transistor, 3A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 3 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e0 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.4 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7306TR
This table gives cross-reference parts and alternative options found for IRF7306TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7306TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRF7306PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 3.6A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | IRF7306TR vs IRF7306PBF |
| IRF7306 | International Rectifier | Check for Price | Power Field-Effect Transistor, 3A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | IRF7306TR vs IRF7306 |
IRF7306TR Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF7306TR is -55°C to 175°C.
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Yes, the IRF7306TR is suitable for high-frequency switching applications up to 1 MHz, but it's essential to consider the device's switching losses, gate drive requirements, and thermal management.
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To ensure proper biasing, follow the recommended gate-source voltage (Vgs) and drain-source voltage (Vds) ratings, and use a suitable gate driver circuit to provide a clean, high-current gate signal.
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For optimal thermal performance, use a multi-layer PCB with a solid ground plane, and ensure good thermal conductivity between the device and the heat sink. Follow the recommended land pattern and thermal pad layout in the datasheet.
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Yes, you can parallel multiple IRF7306TR devices to increase current handling, but it's crucial to ensure that each device is properly matched, and the gate drive and layout are designed to minimize current imbalance and thermal gradients.