Part Details for IRF7304TR by International Rectifier
Results Overview of IRF7304TR by International Rectifier
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF7304TR Information
IRF7304TR by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF7304TR
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 4492 |
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RFQ | ||
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Bristol Electronics | 3529 |
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RFQ | ||
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Quest Components | 3.6 A, 20 V, 0.09 OHM, 2 CHANNEL, P-CHANNEL, SI, POWER, MOSFET, TandR | 2823 |
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$0.8162 / $2.1764 | Buy Now |
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Quest Components | 3.6 A, 20 V, 0.09 OHM, 2 CHANNEL, P-CHANNEL, SI, POWER, MOSFET, TandR | 901 |
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$0.3800 / $0.9500 | Buy Now |
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Quest Components | 3.6 A, 20 V, 0.09 OHM, 2 CHANNEL, P-CHANNEL, SI, POWER, MOSFET, TandR | 235 |
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$0.7345 / $1.3603 | Buy Now |
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ComSIT USA | Electronic Component RoHS: Not Compliant |
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RFQ | |
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Chip 1 Exchange | INSTOCK | 4000 |
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RFQ | |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 72000 |
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$0.4200 | Buy Now |
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Vyrian | Transistors | 2845 |
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RFQ |
Part Details for IRF7304TR
IRF7304TR CAD Models
IRF7304TR Part Data Attributes
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IRF7304TR
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF7304TR
International Rectifier
Power Field-Effect Transistor, 3.6A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 3.6 A | |
| Drain-source On Resistance-Max | 0.09 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e0 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7304TR
This table gives cross-reference parts and alternative options found for IRF7304TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7304TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRF7304TRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 3.6A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | IRF7304TR vs IRF7304TRPBF |
| IRF7304 | International Rectifier | Check for Price | Power Field-Effect Transistor, 3.6A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | IRF7304TR vs IRF7304 |
| IRF7304PBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 4.3A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | IRF7304TR vs IRF7304PBF |
| IRF7304TR | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 3.6A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | IRF7304TR vs IRF7304TR |
| IRF7304TRPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 3.6A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | IRF7304TR vs IRF7304TRPBF |
| IRF7304PBF-1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET | IRF7304TR vs IRF7304PBF-1 |
IRF7304TR Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF7304TR is -55°C to 175°C, but it's recommended to operate within -40°C to 150°C for optimal performance and reliability.
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To ensure proper biasing, make sure to provide a stable voltage supply to the gate-source voltage (Vgs) within the recommended range of 2V to 4V, and maintain a low impedance path to the gate to minimize ringing and oscillations.
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For optimal thermal management, use a PCB with a solid copper plane for the drain pin, and ensure good thermal conductivity between the device and the heat sink. Keep the PCB layout compact and symmetrical to minimize parasitic inductances and capacitances.
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Yes, the IRF7304TR is suitable for high-frequency switching applications up to 1MHz, but be aware of the increased power losses and potential for electromagnetic interference (EMI). Ensure proper PCB layout, decoupling, and filtering to minimize EMI and ringing.
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Use a voltage clamp or a zener diode to protect the device from overvoltage conditions. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC. Ensure the protection circuitry is designed to respond quickly to fault conditions.