Part Details for IRF7303TR by International Rectifier
Results Overview of IRF7303TR by International Rectifier
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF7303TR Information
IRF7303TR by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF7303TR
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 7000 |
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Bristol Electronics | Min Qty: 9 | 2425 |
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$0.1575 / $0.5625 | Buy Now |
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Quest Components | 4 A, 30 V, 0.05 OHM, 2 CHANNEL, N-CHANNEL, SI, POWER, MOSFET, TandR | 12660 |
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$0.1890 / $0.5400 | Buy Now |
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Quest Components | 4 A, 30 V, 0.05 OHM, 2 CHANNEL, N-CHANNEL, SI, POWER, MOSFET, TandR | 5600 |
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$0.3750 / $1.2500 | Buy Now |
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Quest Components | 4 A, 30 V, 0.05 OHM, 2 CHANNEL, N-CHANNEL, SI, POWER, MOSFET, TandR | 4208 |
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$0.1820 / $0.7000 | Buy Now |
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Quest Components | 4 A, 30 V, 0.05 OHM, 2 CHANNEL, N-CHANNEL, SI, POWER, MOSFET, TandR | 1940 |
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$0.1950 / $0.7500 | Buy Now |
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ComSIT USA | Electronic Component RoHS: Not Compliant |
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NexGen Digital | 273 |
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RFQ | ||
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Component Electronics, Inc | IN STOCK SHIP TODAY | 1644 |
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$1.0000 / $1.5400 | Buy Now |
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Vyrian | Transistors | 2947 |
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RFQ |
Part Details for IRF7303TR
IRF7303TR CAD Models
IRF7303TR Part Data Attributes
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IRF7303TR
International Rectifier
Buy Now
Datasheet
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IRF7303TR
International Rectifier
Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | ULTRA LOW RESISTANCE | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 4.9 A | |
| Drain-source On Resistance-Max | 0.05 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e0 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7303TR
This table gives cross-reference parts and alternative options found for IRF7303TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7303TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| AUIRF7303QTR | International Rectifier | Check for Price | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 | IRF7303TR vs AUIRF7303QTR |
| AUIRF7303Q | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 | IRF7303TR vs AUIRF7303Q |
| AUIRF7303QTR | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 | IRF7303TR vs AUIRF7303QTR |
| AUIRF7303Q | International Rectifier | Check for Price | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 | IRF7303TR vs AUIRF7303Q |
| IRF7303QTRPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | IRF7303TR vs IRF7303QTRPBF |
IRF7303TR Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF7303TR is -55°C to 175°C, as specified in the datasheet. However, it's recommended to derate the power dissipation accordingly to ensure reliable operation.
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To calculate the power dissipation of the IRF7303TR, you need to consider the drain-source on-resistance (RDS(on)), the drain current (ID), and the voltage drop across the device. The power dissipation can be calculated using the formula: Pd = RDS(on) x ID^2. Additionally, you should also consider the switching losses and the thermal resistance of the package.
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The recommended gate drive voltage for the IRF7303TR is typically between 10V to 15V, depending on the specific application and the required switching speed. However, it's essential to ensure that the gate drive voltage does not exceed the maximum gate-source voltage rating of 20V.
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Yes, the IRF7303TR is suitable for high-frequency switching applications up to 1MHz. However, it's crucial to consider the device's switching characteristics, such as the rise and fall times, and the gate charge, to ensure that the device can handle the required switching frequency.
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To ensure the reliability of the IRF7303TR in a high-reliability application, it's essential to follow proper design and manufacturing practices, such as using a robust PCB design, selecting suitable components, and implementing adequate thermal management. Additionally, it's recommended to perform thorough testing and validation, including environmental testing, to ensure that the device meets the required reliability standards.