Part Details for IRF7301TRPBF by International Rectifier
Results Overview of IRF7301TRPBF by International Rectifier
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF7301TRPBF Information
IRF7301TRPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF7301TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 2 |
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RFQ | ||
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Quest Components | 4.3 A, 20 V, 0.05 OHM, 2 CHANNEL, N-CHANNEL, SI, POWER, MOSFET, MS-012AA | 8415 |
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$0.3017 / $0.8619 | Buy Now |
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Chip-Germany GmbH | RoHS: Not Compliant | 195 |
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RFQ | |
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Vyrian | Transistors | 176 |
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RFQ |
Part Details for IRF7301TRPBF
IRF7301TRPBF CAD Models
IRF7301TRPBF Part Data Attributes
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IRF7301TRPBF
International Rectifier
Buy Now
Datasheet
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IRF7301TRPBF
International Rectifier
Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 4.3 A | |
| Drain-source On Resistance-Max | 0.05 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.4 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7301TRPBF
This table gives cross-reference parts and alternative options found for IRF7301TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7301TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF7301 | International Rectifier | Check for Price | Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | IRF7301TRPBF vs IRF7301 |
| IRF7301PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | IRF7301TRPBF vs IRF7301PBF |
| IRF7311 | International Rectifier | Check for Price | Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | IRF7301TRPBF vs IRF7311 |
| IRF7311TR | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | IRF7301TRPBF vs IRF7311TR |
| MMDF4N01HD | Motorola Mobility LLC | Check for Price | 4A, 12V, 0.1ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, CASE 751-05, SOIC-8 | IRF7301TRPBF vs MMDF4N01HD |
| MMDF4N01HDR2 | Rochester Electronics LLC | Check for Price | 5.2A, 20V, 0.045ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SO-8 | IRF7301TRPBF vs MMDF4N01HDR2 |
| FDS8926A_NL | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 30V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | IRF7301TRPBF vs FDS8926A_NL |
| IRF7311TR | International Rectifier | Check for Price | Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | IRF7301TRPBF vs IRF7311TR |
| FDS8926A | Rochester Electronics LLC | Check for Price | 5.5A, 30V, 0.03ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SOIC-8 | IRF7301TRPBF vs FDS8926A |
| IRF7311PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | IRF7301TRPBF vs IRF7311PBF |
IRF7301TRPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF7301TRPBF is -55°C to 175°C.
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Yes, the IRF7301TRPBF is a logic-level MOSFET, which means it can be driven directly by a microcontroller or other low-voltage logic device.
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The maximum current rating for the IRF7301TRPBF is 12A.
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The IRF7301TRPBF is a P-channel MOSFET.
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The typical turn-on time for the IRF7301TRPBF is around 10ns, and the typical turn-off time is around 20ns.