Part Details for IRF7301TR by International Rectifier
Results Overview of IRF7301TR by International Rectifier
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF7301TR Information
IRF7301TR by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF7301TR
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 2815 |
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RFQ | ||
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Quest Components | TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,20V V(BR)DSS,4.3A I(D),SO | 3120 |
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$0.7200 / $2.4000 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,20V V(BR)DSS,4.3A I(D),SO | 1500 |
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$0.5280 / $1.4400 | Buy Now |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 450 |
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$0.7500 / $1.1500 | Buy Now |
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Win Source Electronics | 4568 |
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$0.2711 / $0.4066 | Buy Now |
Part Details for IRF7301TR
IRF7301TR CAD Models
IRF7301TR Part Data Attributes
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IRF7301TR
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF7301TR
International Rectifier
Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 4.3 A | |
| Drain-source On Resistance-Max | 0.05 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e0 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7301TR
This table gives cross-reference parts and alternative options found for IRF7301TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7301TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF7301PBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | IRF7301TR vs IRF7301PBF |
| IRF7301TRPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | IRF7301TR vs IRF7301TRPBF |
IRF7301TR Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF7301TR is -55°C to 175°C, as specified in the datasheet. However, it's recommended to derate the power dissipation at higher temperatures to ensure reliable operation.
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To calculate the power dissipation of the IRF7301TR, you need to consider the drain-source on-resistance (RDS(on)), the drain current (ID), and the voltage drop across the device. The power dissipation can be calculated using the formula: Pd = RDS(on) x ID^2. Additionally, you should also consider the switching losses and the thermal resistance of the device.
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The recommended gate drive voltage for the IRF7301TR is typically between 10V to 15V, depending on the specific application and the desired switching speed. A higher gate drive voltage can result in faster switching times, but may also increase the power consumption and the risk of gate oxide damage.
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Yes, the IRF7301TR is suitable for high-frequency switching applications up to several hundred kHz. However, you need to consider the device's switching characteristics, such as the rise and fall times, and the gate charge, to ensure that the device can handle the desired switching frequency. Additionally, you should also consider the layout and the parasitic components in the circuit to minimize the ringing and the electromagnetic interference (EMI).
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To protect the IRF7301TR from overvoltage and overcurrent, you can use a combination of voltage clamping devices, such as zener diodes or transient voltage suppressors (TVS), and current sensing resistors or fuses. Additionally, you can also use a gate driver IC with built-in overcurrent protection and undervoltage lockout (UVLO) to prevent the device from operating outside of its safe operating area.