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Part Details for IRF6665TRPBF by Infineon Technologies AG
Results Overview of IRF6665TRPBF by Infineon Technologies AG
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF6665TRPBF Information
IRF6665TRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF6665TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
91Y4745
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Newark | Mosfet, N-Ch, 100V, 19A, 150Deg C, 42W, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:19A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V Rohs Compliant: Yes |Infineon IRF6665TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
85989149
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Verical | IRF6665TRPBF Infineon Technologies AG Transistors MOSFETs N-CH Si 100V 4.2A 6-Pin Direct-FET SH T/R Si - Arrow.com RoHS: Compliant Min Qty: 455 Package Multiple: 1 Date Code: 2401 | Americas - 633870 |
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$0.5114 / $0.8248 | Buy Now |
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DISTI #
85989717
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Verical | IRF6665TRPBF Infineon Technologies AG Transistors MOSFETs N-CH Si 100V 4.2A 6-Pin Direct-FET SH T/R Si - Arrow.com RoHS: Compliant Min Qty: 455 Package Multiple: 1 Date Code: 2301 | Americas - 5752 |
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$0.5114 / $0.8248 | Buy Now |
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DISTI #
87005714
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Verical | IRF6665TRPBF Infineon Technologies AG Transistors MOSFETs N-CH Si 100V 4.2A 6-Pin Direct-FET SH T/R Si - Arrow.com RoHS: Compliant Min Qty: 455 Package Multiple: 1 Date Code: 2201 | Americas - 1590 |
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$0.5114 / $0.8248 | Buy Now |
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Rochester Electronics | IRF6665 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 641212 |
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$0.4091 / $0.6598 | Buy Now |
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DISTI #
IRF6665TRPBF
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TME | Transistor: N-MOSFET, unipolar, 100V, 4.2A, 42W, DirectFET Min Qty: 4800 | 0 |
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$1.2800 | RFQ |
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DISTI #
SP001559710
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EBV Elektronik | Power MOSFET N Channel 100 V 19 A 62 Milliohms DirectFET SH 6 Pins Surface Mount (Alt: SP001559710) RoHS: Compliant Min Qty: 4800 Package Multiple: 4800 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Flip Electronics | Stock | 5000 |
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RFQ | |
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Win Source Electronics | MOSFET N-CH 100V 4.2A DIRECTFET / Trans MOSFET N-CH Si 100V 4.2A 6-Pin Direct-FET SH T/R | 9600 |
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$3.8581 / $5.7870 | Buy Now |
Part Details for IRF6665TRPBF
IRF6665TRPBF CAD Models
IRF6665TRPBF Part Data Attributes
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IRF6665TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF6665TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 4.2A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 11 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 4.2 A | |
| Drain-source On Resistance-Max | 0.062 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XBCC-N2 | |
| JESD-609 Code | e1 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 42 W | |
| Pulsed Drain Current-Max (IDM) | 34 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF6665TRPBF
This table gives cross-reference parts and alternative options found for IRF6665TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF6665TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF6665TR1 | International Rectifier | Check for Price | Power Field-Effect Transistor, 4.2A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 | IRF6665TRPBF vs IRF6665TR1 |
| IRF6665TR1PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 4.2A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2 | IRF6665TRPBF vs IRF6665TR1PBF |
| IRF6665PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 4.2A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2 | IRF6665TRPBF vs IRF6665PBF |
| IRF6665PBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 4.2A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2 | IRF6665TRPBF vs IRF6665PBF |
| IRF6665TRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 4.2A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2 | IRF6665TRPBF vs IRF6665TRPBF |
IRF6665TRPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF6665TRPBF is -55°C to 175°C.
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To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and monitoring junction temperature.
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The recommended gate drive voltage for the IRF6665TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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To protect the IRF6665TRPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the PCB is designed with ESD protection in mind.
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The maximum allowable power dissipation for the IRF6665TRPBF is 150W, but this can be affected by factors such as ambient temperature, heat sinking, and duty cycle.