Part Details for IRF6619 by Infineon Technologies AG
Results Overview of IRF6619 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
IRF6619 Information
IRF6619 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF6619
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF6619CT-ND
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DigiKey | MOSFET N-CH 20V 30A DIRECTFET Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Tape & Reel (TR) |
13859 In Stock |
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$1.3750 / $1.8000 | Buy Now |
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Cytech Systems Limited | MOSFET N-CH 20V 30A DIRECTFET | 9600 |
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RFQ |
Part Details for IRF6619
IRF6619 CAD Models
IRF6619 Part Data Attributes
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IRF6619
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF6619
Infineon Technologies AG
Power Field-Effect Transistor, 30A I(D), 20V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | ROHS COMPLIANT, ISOMETRIC-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 240 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.0022 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XBCC-N3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF6619
This table gives cross-reference parts and alternative options found for IRF6619. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF6619, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF6619PBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 30A I(D), 20V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 | IRF6619 vs IRF6619PBF |
| IRF6619 | International Rectifier | Check for Price | Power Field-Effect Transistor, 30A I(D), 20V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MX, ISOMETRIC-2 | IRF6619 vs IRF6619 |
| IRF6619PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 30A I(D), 20V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 | IRF6619 vs IRF6619PBF |
| IRF6619TRPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 30A I(D), 20V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 | IRF6619 vs IRF6619TRPBF |
IRF6619 Frequently Asked Questions (FAQ)
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The maximum junction temperature (Tj) of the IRF6619 is 175°C. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
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To calculate the power dissipation of the IRF6619, you need to know the drain-source on-state resistance (Rds(on)), the drain current (Id), and the voltage drop across the MOSFET (Vds). The power dissipation (Pd) can be calculated using the formula: Pd = Rds(on) * Id^2 + Vds * Id. You can find the Rds(on) value in the datasheet.
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The recommended gate drive voltage for the IRF6619 is between 10V and 15V. A higher gate drive voltage can reduce the Rds(on) and improve the switching performance, but it may also increase the gate charge and the power consumption of the gate driver.
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Yes, the IRF6619 is suitable for high-frequency switching applications up to 1 MHz. However, you need to ensure that the gate drive circuitry and the layout are optimized for high-frequency operation to minimize the switching losses and the electromagnetic interference (EMI).
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To protect the IRF6619 from overvoltage and overcurrent, you can use a combination of voltage regulators, zener diodes, and current sense resistors. You can also use a dedicated overvoltage protection (OVP) and overcurrent protection (OCP) IC to monitor the voltage and current levels and shut down the circuit in case of an overvoltage or overcurrent condition.