Part Details for IRF640STRRPBF by Vishay Intertechnologies
Results Overview of IRF640STRRPBF by Vishay Intertechnologies
- Distributor Offerings: (16 listings)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF640STRRPBF Information
IRF640STRRPBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF640STRRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31K2172
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Newark | N Channel Mosfet, 200V, 18A, D2-Pak, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:18A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4Vrohs Compliant: Yes |Vishay IRF640STRRPBF RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$1.2100 / $1.6300 | Buy Now |
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DISTI #
05W6870
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Newark | Mosfet, N Channel, 200V, 18A, To-263-3, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:18A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Vishay IRF640STRRPBF RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$1.7600 | Buy Now |
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DISTI #
IRF640STRRPBF
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Avnet Americas | MOSFET N-CHANNEL 200V - Tape and Reel (Alt: IRF640STRRPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
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$1.1753 / $1.2488 | Buy Now |
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DISTI #
844-IRF640STRRPBF
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Mouser Electronics | MOSFETs N-Chan 200V 18 Amp RoHS: Compliant | 1336 |
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$1.0100 / $2.0100 | Buy Now |
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DISTI #
V72:2272_09218893
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Arrow Electronics | Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2305 Container: Cut Strips | Americas - 307 |
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$0.8692 / $0.9283 | Buy Now |
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Future Electronics | Single N-Channel 200 V 0.18 Ohms Surface Mount Power Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 800Reel |
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$0.7100 / $0.7450 | Buy Now |
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DISTI #
66715966
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Verical | Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK T/R Min Qty: 7 Package Multiple: 1 Date Code: 2305 | Americas - 307 |
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$0.8692 / $0.9283 | Buy Now |
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Bristol Electronics | 750 |
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RFQ | ||
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Bristol Electronics | 200 |
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RFQ | ||
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Quest Components | 600 |
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$3.3750 / $6.7500 | Buy Now |
Part Details for IRF640STRRPBF
IRF640STRRPBF CAD Models
IRF640STRRPBF Part Data Attributes
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IRF640STRRPBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRF640STRRPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | LEAD FREE, PLASTIC, D2PAK-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 580 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.18 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 130 W | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF640STRRPBF
This table gives cross-reference parts and alternative options found for IRF640STRRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF640STRRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SIHF640S-GE3 | Vishay Intertechnologies | $0.7983 | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3 | IRF640STRRPBF vs SIHF640S-GE3 |
| IRF640S | Motorola Mobility LLC | Check for Price | 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF640STRRPBF vs IRF640S |
| IRF640S/T3 | NXP Semiconductors | Check for Price | TRANSISTOR 16 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-404, D2PAK-3, FET General Purpose Power | IRF640STRRPBF vs IRF640S/T3 |
| IRF640STRLPBF | Vishay Intertechnologies | $2.1310 | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRF640STRRPBF vs IRF640STRLPBF |
| IRF640S | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 | IRF640STRRPBF vs IRF640S |
| IRF640STRL | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 | IRF640STRRPBF vs IRF640STRL |
| IRF640STRLPBF | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | IRF640STRRPBF vs IRF640STRLPBF |
| IRF640STR | International Rectifier | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | IRF640STRRPBF vs IRF640STR |
| IRF640S | STMicroelectronics | Check for Price | 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3 | IRF640STRRPBF vs IRF640S |
IRF640STRRPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF640STRRPBF is -55°C to 175°C.
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Yes, the IRF640STRRPBF is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.
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The maximum current rating for the IRF640STRRPBF is 18A.
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Yes, the IRF640STRRPBF is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
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The IRF640STRRPBF comes in a TO-220AB package.