Datasheets
IRF640STRL by:

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3

Part Details for IRF640STRL by Vishay Intertechnologies

Results Overview of IRF640STRL by Vishay Intertechnologies

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IRF640STRL Information

IRF640STRL by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF640STRL

Part # Distributor Description Stock Price Buy
DISTI # IRF640STRL
Avnet Americas MOSFET N-CHANNEL 200V - Tape and Reel (Alt: IRF640STRL) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 111 Weeks, 0 Days Container: Reel 0
RFQ
Bristol Electronics   220
RFQ
Quest Components TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,18A I(D),TO-263AB 176
  • 1 $14.9400
  • 26 $9.2130
  • 110 $8.2170
$8.2170 / $14.9400 Buy Now

Part Details for IRF640STRL

IRF640STRL CAD Models

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IRF640STRL Part Data Attributes

IRF640STRL Vishay Intertechnologies
Buy Now Datasheet
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IRF640STRL Vishay Intertechnologies Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description PLASTIC, D2PAK-3
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 111 Weeks
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 580 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 130 W
Pulsed Drain Current-Max (IDM) 72 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF640STRL

This table gives cross-reference parts and alternative options found for IRF640STRL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF640STRL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF640STRRPBF Vishay Intertechnologies $1.9646 Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRF640STRL vs IRF640STRRPBF
IRF640STRR Vishay Siliconix Check for Price Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 IRF640STRL vs IRF640STRR
Part Number Manufacturer Composite Price Description Compare
IRF640S Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 IRF640STRL vs IRF640S
IRF640SPBF Vishay Intertechnologies $1.1751 Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRF640STRL vs IRF640SPBF
SIHF640S-GE3 Vishay Intertechnologies $0.7983 Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3 IRF640STRL vs SIHF640S-GE3
IRF640STRLPBF Vishay Intertechnologies $2.1310 Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRF640STRL vs IRF640STRLPBF
IRF640NSTRLPBF Infineon Technologies AG $0.7061 Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3 IRF640STRL vs IRF640NSTRLPBF
BUZ31 Vishay Siliconix Check for Price Power Field-Effect Transistor, 12.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET, IRF640STRL vs BUZ31
IRF640STRR Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 IRF640STRL vs IRF640STRR
IRF642 Rochester Electronics LLC Check for Price 16A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB IRF640STRL vs IRF642
IRF641 Rochester Electronics LLC Check for Price 18A, 150V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB IRF640STRL vs IRF641
FQB19N20TM Rochester Electronics LLC Check for Price 19.4A, 200V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 IRF640STRL vs FQB19N20TM

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