Datasheets
IRF640PBF by:

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN

Part Details for IRF640PBF by Vishay Siliconix

Results Overview of IRF640PBF by Vishay Siliconix

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IRF640PBF Information

IRF640PBF by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF640PBF

Part # Distributor Description Stock Price Buy
DISTI # IRF640PBF-ND
DigiKey MOSFET N-CH 200V 18A TO220AB Min Qty: 1 Lead time: 15 Weeks Container: Bulk 1421
In Stock
  • 1 $1.8600
  • 50 $1.2292
  • 100 $1.1424
  • 500 $1.1238
$1.1238 / $1.8600 Buy Now
DISTI # 70459393
RS N-Chan 200V 18 Amp Min Qty: 1000 Package Multiple: 1 Container: Bulk 0
  • 1,000 $2.0800
  • 10,000 $1.9800
  • 50,000 $1.8800
  • 100,000 $1.7700
$1.7700 / $2.0800 RFQ
Bristol Electronics   80
RFQ

Part Details for IRF640PBF

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IRF640PBF Part Data Attributes

IRF640PBF Vishay Siliconix
Buy Now Datasheet
Compare Parts:
IRF640PBF Vishay Siliconix Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer VISHAY SILICONIX
Part Package Code TO-220AB
Package Description ROHS COMPLIANT, TO-220, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 580 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 72 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF640PBF

This table gives cross-reference parts and alternative options found for IRF640PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF640PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF640 National Semiconductor Corporation Check for Price TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,18A I(D),TO-220AB IRF640PBF vs IRF640
IRF640 Intersil Corporation Check for Price 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB IRF640PBF vs IRF640
IRF640 Rochester Electronics LLC Check for Price 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB IRF640PBF vs IRF640
IRF640 Microsemi Corporation Check for Price IRF640 IRF640PBF vs IRF640
Part Number Manufacturer Composite Price Description Compare
IRF640PBF International Rectifier Check for Price Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 IRF640PBF vs IRF640PBF
IRF640-010 International Rectifier Check for Price Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF640PBF vs IRF640-010
IRF640-006 International Rectifier Check for Price Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF640PBF vs IRF640-006
IRF640 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN IRF640PBF vs IRF640
IRF640 International Rectifier Check for Price Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF640PBF vs IRF640
IRF640N Infineon Technologies AG Check for Price Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRF640PBF vs IRF640N
IRF640N Motorola Semiconductor Products Check for Price Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF640PBF vs IRF640N
IRF640NPBF International Rectifier $0.2774 Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 IRF640PBF vs IRF640NPBF
934055545127 NXP Semiconductors Check for Price TRANSISTOR 16 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power IRF640PBF vs 934055545127
IRF640N International Rectifier $0.1875 Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRF640PBF vs IRF640N

IRF640PBF Related Parts

IRF640PBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF640PBF is -55°C to 175°C.

  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.

  • The maximum voltage rating for the IRF640PBF is 200V.

  • Yes, the IRF640PBF is suitable for high-frequency switching applications up to 1MHz. However, ensure that the device is properly cooled and the switching frequency is within the recommended range.

  • To protect the IRF640PBF from ESD, handle the device by the body or use an anti-static wrist strap. Ensure that the workspace and equipment are also ESD-protected.

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