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Part Details for IRF640PBF by Vishay Intertechnologies
Results Overview of IRF640PBF by Vishay Intertechnologies
- Distributor Offerings: (23 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF640PBF Information
IRF640PBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF640PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
63J7355
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Newark | N Channel Mosfet, 200V, 18A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:18A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V, Msl:- Rohs Compliant: Yes |Vishay IRF640PBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 545 |
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$1.3700 / $2.0800 | Buy Now |
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DISTI #
IRF640PBF
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Avnet Americas | Power MOSFET, N Channel, 200 V, 18 A, 0.18 ohm, TO-220, Through Hole - Bulk (Alt: IRF640PBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Bulk | 21265 |
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$0.5321 / $0.6019 | Buy Now |
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DISTI #
63J7355
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Avnet Americas | Power MOSFET, N Channel, 200 V, 18 A, 0.18 ohm, TO-220, Through Hole - Bulk (Alt: 63J7355) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 3 Days Container: Bulk | 545 Partner Stock |
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$1.3700 / $2.1600 | Buy Now |
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DISTI #
844-IRF640PBF
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Mouser Electronics | MOSFETs TO220 200V 18A N-CH MOSFET RoHS: Compliant | 5269 |
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$0.7010 / $1.8100 | Buy Now |
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DISTI #
E02:0323_00021199
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Arrow Electronics | Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2513 | Europe - 4652 |
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$0.7991 / $2.0633 | Buy Now |
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DISTI #
V36:1790_07434919
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Arrow Electronics | Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2129 | Americas - 577 |
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$0.6996 / $1.8064 | Buy Now |
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DISTI #
V99:2348_07434919
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Arrow Electronics | Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2238 | Americas - 301 |
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$0.6112 / $0.8011 | Buy Now |
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DISTI #
70078855
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RS | MOSFET, Power, N-Ch, VDSS 200V, RDS(ON) 0.18Ohm, ID 18A, TO-220AB, PD 125W, VGS +/-20V Min Qty: 1 Package Multiple: 1 Lead time: 3 Weeks, 0 Days Container: Bulk | 756 |
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$0.9900 | Buy Now |
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Future Electronics | Single N-Channel 200 V 0.18 Ohms Flange Mount Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 4587Tube |
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$0.6050 / $0.6850 | Buy Now |
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DISTI #
88210300
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Verical | Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB Min Qty: 18 Package Multiple: 1 Date Code: 2513 | Americas - 4652 |
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$0.5866 | Buy Now |
Part Details for IRF640PBF
IRF640PBF CAD Models
IRF640PBF Part Data Attributes
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IRF640PBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRF640PBF
Vishay Intertechnologies
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Part Package Code | TO-220AB | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 580 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.18 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 130 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF640PBF
This table gives cross-reference parts and alternative options found for IRF640PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF640PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF640 | STMicroelectronics | Check for Price | 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | IRF640PBF vs IRF640 |
| IRF640,127 | NXP Semiconductors | Check for Price | IRF640 | IRF640PBF vs IRF640,127 |
| IRF640 | Unitrode Corporation | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IRF640PBF vs IRF640 |
| IRF640 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IRF640PBF vs IRF640 |
| IRF640 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF640PBF vs IRF640 |
| IRF640 | NXP Semiconductors | Check for Price | 16A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN | IRF640PBF vs IRF640 |
| IRF640 | onsemi | Check for Price | 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-06, 4 PIN | IRF640PBF vs IRF640 |
IRF640PBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF640PBF is -55°C to 175°C.
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To ensure reliability, ensure proper thermal management, use a suitable heat sink, and follow the recommended PCB layout and assembly guidelines.
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The maximum allowable voltage for the IRF640PBF is 200V, but it's recommended to operate within the specified maximum voltage rating of 150V to ensure reliability.
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Handle the IRF640PBF with ESD-protective equipment, wear an ESD strap, and ensure the workspace is ESD-safe to prevent damage from electrostatic discharge.
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Store the IRF640PBF in a dry, cool place, away from direct sunlight, and in its original packaging or an ESD-protective bag to prevent damage.