Part Details for IRF640PBF by International Rectifier
Results Overview of IRF640PBF by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF640PBF Information
IRF640PBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF640PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,18A I(D),TO-220AB | 47 |
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$1.1820 / $1.9700 | Buy Now |
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Chip 1 Exchange | INSTOCK | 4 |
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RFQ |
Part Details for IRF640PBF
IRF640PBF CAD Models
IRF640PBF Part Data Attributes
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IRF640PBF
International Rectifier
Buy Now
Datasheet
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IRF640PBF
International Rectifier
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-220AB | |
| Package Description | LEAD FREE PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 580 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.18 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 250 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF640PBF
This table gives cross-reference parts and alternative options found for IRF640PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF640PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF640 | National Semiconductor Corporation | Check for Price | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,18A I(D),TO-220AB | IRF640PBF vs IRF640 |
| IRF640 | Motorola Mobility LLC | Check for Price | 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF640PBF vs IRF640 |
| IRF640-001 | International Rectifier | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IRF640PBF vs IRF640-001 |
| IRF640 | Microsemi Corporation | Check for Price | IRF640 | IRF640PBF vs IRF640 |
IRF640PBF Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF640PBF is not explicitly stated in the datasheet, but it can be determined by consulting the International Rectifier application note AN-936, which provides guidelines for calculating the SOA for power MOSFETs.
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To ensure proper thermal management, it's essential to provide a good thermal path from the device to a heat sink or the PCB. This can be achieved by using a thermal interface material (TIM) and a heat sink with a low thermal resistance. The IRF640PBF has a thermal pad on the bottom, which should be connected to a copper plane on the PCB to help dissipate heat.
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The recommended gate drive voltage for the IRF640PBF is typically between 10V to 15V, depending on the specific application and required switching speed. However, it's essential to ensure that the gate drive voltage does not exceed the maximum gate-source voltage rating of ±20V to prevent damage to the device.
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Yes, the IRF640PBF can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and the gate charge. The IRF640PBF has a relatively high gate charge, which may limit its use in very high-frequency applications. Additionally, the device's parasitic capacitances and inductances should be considered to ensure proper operation.
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To protect the IRF640PBF from ESD, it's essential to handle the device with care, using anti-static wrist straps, mats, and packaging materials. During PCB assembly, ensure that the device is not exposed to ESD-sensitive areas, and consider using ESD protection devices, such as TVS diodes or ESD protection arrays, to protect the device from ESD events.