Datasheets
IRF640PBF-BE3 by:

Power Field-Effect Transistor,

Part Details for IRF640PBF-BE3 by Vishay Intertechnologies

Results Overview of IRF640PBF-BE3 by Vishay Intertechnologies

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IRF640PBF-BE3 Information

IRF640PBF-BE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF640PBF-BE3

Part # Distributor Description Stock Price Buy
DISTI # 78AH6378
Newark Mosfet, N-Ch, 200V, 18A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:18A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay IRF640PBF-BE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 427
  • 1 $0.9990
  • 10 $0.9990
  • 25 $0.9990
  • 50 $0.9990
  • 100 $0.9990
  • 500 $0.9990
  • 1,000 $0.9990
$0.9990 Buy Now
DISTI # IRF640PBF-BE3
Avnet Americas MOSFET N-CHANNEL 200V - Rail/Tube (Alt: IRF640PBF-BE3) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Tube 1000
  • 1,000 $1.1238
  • 1,100 $1.1058
  • 2,100 $1.0884
  • 5,000 $1.0702
  • 10,000 $1.0576
$1.0576 / $1.1238 Buy Now
DISTI # 78AH6378
Avnet Americas MOSFET N-CHANNEL 200V - Bulk (Alt: 78AH6378) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 1 Days Container: Bulk 427 Partner Stock
  • 1 $2.0900
  • 10 $1.4400
  • 25 $1.3600
  • 50 $1.2800
  • 100 $1.2100
$1.2100 / $2.0900 Buy Now
DISTI # 78-IRF640PBF-BE3
Mouser Electronics MOSFETs TO220 200V 18A N-CH MOSFET RoHS: Compliant 5036
  • 1 $1.9400
  • 10 $1.3400
  • 25 $1.2100
  • 100 $1.1100
  • 500 $0.8800
  • 1,000 $0.7660
  • 2,000 $0.7620
$0.7620 / $1.9400 Buy Now
DISTI # E02:0323_18498729
Arrow Electronics Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB Min Qty: 750 Package Multiple: 50 Lead time: 17 Weeks Date Code: 2236 Europe - 750
  • 750 $0.7386
  • 1,000 $0.6826
$0.6826 / $0.7386 Buy Now
DISTI # 82745624
Verical Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB Min Qty: 750 Package Multiple: 750 Date Code: 2236 Americas - 750
  • 750 $0.7426
  • 1,000 $0.6862
$0.6862 / $0.7426 Buy Now
DISTI # 78951876
Verical Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB Min Qty: 51 Package Multiple: 1 Americas - 427
  • 51 $1.1946
$1.1946 Buy Now
Bristol Electronics   2000
RFQ
DISTI # IRF640PBF-BE3
TTI MOSFETs TO220 200V 18A N-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube Americas - 39600
In Stock
  • 50 $1.2300
  • 100 $1.2100
  • 500 $1.1900
  • 750 $1.1600
$1.1600 / $1.2300 Buy Now
DISTI # IRF640PBF-BE3
TME Transistor: N-MOSFET, unipolar, 200V, 18A, Idm: 72A, 125W, TO220AB Min Qty: 1 0
  • 1 $1.4600
  • 10 $1.2500
  • 50 $1.0800
  • 100 $1.0100
  • 250 $0.9000
  • 500 $0.8200
  • 1,000 $0.7400
  • 2,000 $0.7200
$0.7200 / $1.4600 RFQ

Part Details for IRF640PBF-BE3

IRF640PBF-BE3 CAD Models

IRF640PBF-BE3 Part Data Attributes

IRF640PBF-BE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRF640PBF-BE3 Vishay Intertechnologies Power Field-Effect Transistor,
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code unknown
Factory Lead Time 18 Weeks, 1 Day
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 580 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 130 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 72 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

IRF640PBF-BE3 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF640PBF-BE3 is -55°C to 175°C.

  • Yes, the IRF640PBF-BE3 is a logic-level MOSFET, which means it can be driven directly by a microcontroller or logic gate without the need for an additional driver circuit.

  • The maximum current rating for the IRF640PBF-BE3 is 18A, but this rating is dependent on the operating conditions and the device's thermal management.

  • Yes, the IRF640PBF-BE3 is suitable for high-frequency switching applications due to its low gate charge and fast switching times.

  • The IRF640PBF-BE3 comes in a TO-220AB package, which is a through-hole package with a heat sink tab.

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