Part Details for IRF640NSTRRPBF by Infineon Technologies AG
Results Overview of IRF640NSTRRPBF by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF640NSTRRPBF Information
IRF640NSTRRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF640NSTRRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
V72:2272_13890585
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Arrow Electronics | Trans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 98 Weeks Date Code: 2239 Container: Cut Strips | Americas - 184 |
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$0.5620 / $0.6002 | Buy Now |
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DISTI #
65040152
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Verical | Trans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R Min Qty: 11 Package Multiple: 1 Date Code: 2239 | Americas - 184 |
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$0.5620 / $0.5907 | Buy Now |
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ComSIT USA | AVAILABLE EU | 3011 |
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RFQ | |
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DISTI #
SMC-IRF640NSTRRPBF
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Sensible Micro Corporation | AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 6428 |
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RFQ | |
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DISTI #
SP001561802
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EBV Elektronik | Trans MOSFET NCH 200V 18A 3Pin2Tab D2PAK TR (Alt: SP001561802) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 143 Weeks, 0 Days | EBV - 800 |
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Buy Now | |
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Win Source Electronics | MOSFET N-CH 200V 18A D2PAK | 433370 |
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$0.4308 / $0.5556 | Buy Now |
Part Details for IRF640NSTRRPBF
IRF640NSTRRPBF CAD Models
IRF640NSTRRPBF Part Data Attributes
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IRF640NSTRRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF640NSTRRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 52 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 247 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.15 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF640NSTRRPBF
This table gives cross-reference parts and alternative options found for IRF640NSTRRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF640NSTRRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF640NS | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-2/3 | IRF640NSTRRPBF vs IRF640NS |
| IRF640NS | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | IRF640NSTRRPBF vs IRF640NS |
| IRF640NSTRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-2/3 | IRF640NSTRRPBF vs IRF640NSTRR |
| IRF640NSPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3 | IRF640NSTRRPBF vs IRF640NSPBF |
| IRF640NSTRRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3 | IRF640NSTRRPBF vs IRF640NSTRRPBF |
| IRF640NS | International Rectifier | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-2/3 | IRF640NSTRRPBF vs IRF640NS |
| IRF640NSPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3 | IRF640NSTRRPBF vs IRF640NSPBF |
IRF640NSTRRPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF640NSTRRPBF is -55°C to 175°C.
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To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified ratings and guidelines.
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The recommended gate drive voltage for the IRF640NSTRRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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Yes, the IRF640NSTRRPBF is suitable for high-frequency switching applications, but ensure proper gate drive and layout to minimize switching losses and electromagnetic interference (EMI).
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Handle the device with proper ESD precautions, such as using an ESD wrist strap or mat, and ensure the device is stored in an ESD-protected environment.