Part Details for IRF640NSTRR by International Rectifier
Results Overview of IRF640NSTRR by International Rectifier
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF640NSTRR Information
IRF640NSTRR by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF640NSTRR
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 442 |
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RFQ | ||
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Quest Components | 18 A, 200 V, 0.15 OHM, N-CHANNEL, SI, POWER, MOSFET | 353 |
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$0.5280 / $1.3200 | Buy Now |
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Quest Components | 18 A, 200 V, 0.15 OHM, N-CHANNEL, SI, POWER, MOSFET | 71 |
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$1.8000 / $3.6000 | Buy Now |
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Vyrian | Transistors | 1305 |
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RFQ |
Part Details for IRF640NSTRR
IRF640NSTRR CAD Models
IRF640NSTRR Part Data Attributes
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IRF640NSTRR
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF640NSTRR
International Rectifier
Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-2/3
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| Pbfree Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC | |
| Part Package Code | D2PAK | |
| Package Description | PLASTIC, D2PAK-2/3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 247 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.15 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF640NSTRR
This table gives cross-reference parts and alternative options found for IRF640NSTRR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF640NSTRR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF640NSTRRPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3 | IRF640NSTRR vs IRF640NSTRRPBF |
| IRF640NS | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-2/3 | IRF640NSTRR vs IRF640NS |
| IRF640NS | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | IRF640NSTRR vs IRF640NS |
| IRF640NSPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3 | IRF640NSTRR vs IRF640NSPBF |
| IRF640NSTRRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3 | IRF640NSTRR vs IRF640NSTRRPBF |
| IRF640NS | International Rectifier | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-2/3 | IRF640NSTRR vs IRF640NS |
| IRF640NSPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3 | IRF640NSTRR vs IRF640NSPBF |
IRF640NSTRR Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF640NSTRR is not explicitly stated in the datasheet, but it can be determined by consulting the International Rectifier application note AN-936, which provides guidelines for calculating the SOA for power MOSFETs.
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To ensure proper thermal management, it's essential to provide a good thermal path from the device to a heat sink or the PCB. This can be achieved by using a thermal interface material, such as thermal paste or thermal tape, and ensuring that the heat sink is properly attached to the device. Additionally, the PCB should be designed to dissipate heat efficiently, and the device should be operated within its specified temperature range.
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The recommended gate drive voltage for the IRF640NSTRR is typically between 10V and 15V, depending on the specific application and the desired switching speed. However, it's essential to consult the datasheet and application notes for specific guidance on gate drive voltage and switching speed.
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To protect the IRF640NSTRR from electrostatic discharge (ESD), it's essential to handle the device with care, using anti-static wrist straps, mats, and packaging materials. Additionally, the device should be stored in a static-safe environment, and ESD protection devices, such as TVS diodes, can be used to protect the device from ESD events.
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The maximum allowed voltage for the IRF640NSTRR's gate-source voltage (Vgs) is ±20V, as specified in the datasheet. Exceeding this voltage can damage the device.