Part Details for IRF640NSTRLPBF by Infineon Technologies AG
Results Overview of IRF640NSTRLPBF by Infineon Technologies AG
- Distributor Offerings: (28 listings)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF640NSTRLPBF Information
IRF640NSTRLPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF640NSTRLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
42Y0392
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Newark | Mosfet, N-Ch, 200V, 18A, To-263Ab, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:18A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRF640NSTRLPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 1157 |
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$0.5750 | Buy Now |
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DISTI #
86AK5361
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Newark | Mosfet, N-Ch, 200V, 18A, To-263Ab Rohs Compliant: Yes |Infineon IRF640NSTRLPBF RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.7960 / $0.8110 | Buy Now |
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DISTI #
IRF640NSTRLPBFCT-ND
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DigiKey | MOSFET N-CH 200V 18A D2PAK Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
9890 In Stock |
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$0.5034 / $1.9400 | Buy Now |
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DISTI #
42Y0392
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Avnet Americas | Power MOSFET, N Channel, 200 V, 18 A, 0.15 ohm, TO-263AB, Surface Mount - Product that comes on tape, but is not reeled (Alt: 42Y0392) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 1157 Partner Stock |
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$1.0300 / $1.9000 | Buy Now |
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DISTI #
IRF640NSTRLPBF
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Avnet Americas | Power MOSFET, N Channel, 200 V, 18 A, 0.15 ohm, TO-263AB, Surface Mount - Tape and Reel (Alt: IRF640NSTRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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$0.3883 / $0.4084 | Buy Now |
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DISTI #
IRF640NSTRLPBF
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Avnet Americas | Power MOSFET, N Channel, 200 V, 18 A, 0.15 ohm, TO-263AB, Surface Mount - Tape and Reel (Alt: IRF640NSTRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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$0.3859 / $0.4128 | Buy Now |
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DISTI #
942-IRF640NSTRLPBF
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Mouser Electronics | MOSFETs MOSFT 200V 18A 150mOhm 44.7nC RoHS: Compliant | 0 |
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$0.5520 / $1.8000 | Order Now |
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DISTI #
E02:0323_00175979
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Arrow Electronics | Trans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Lead time: 18 Weeks Date Code: 2509 | Europe - 5600 |
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$0.4288 / $0.4786 | Buy Now |
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DISTI #
V36:1790_13890582
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Arrow Electronics | Trans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Lead time: 18 Weeks Date Code: 2427 | Americas - 1600 |
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$0.5024 / $0.6027 | Buy Now |
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DISTI #
V72:2272_13890582
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Arrow Electronics | Trans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 2235 Container: Cut Strips | Americas - 519 |
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$0.5146 / $0.9304 | Buy Now |
Part Details for IRF640NSTRLPBF
IRF640NSTRLPBF CAD Models
IRF640NSTRLPBF Part Data Attributes
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IRF640NSTRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF640NSTRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 247 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.15 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF640NSTRLPBF
This table gives cross-reference parts and alternative options found for IRF640NSTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF640NSTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF640NSPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3 | IRF640NSTRLPBF vs IRF640NSPBF |
| IRF640NS | International Rectifier | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-2/3 | IRF640NSTRLPBF vs IRF640NS |
| IRF640NSPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3 | IRF640NSTRLPBF vs IRF640NSPBF |
| IRF640NS | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | IRF640NSTRLPBF vs IRF640NS |
IRF640NSTRLPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF640NSTRLPBF is -55°C to 175°C.
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To ensure reliability, ensure proper thermal management, use a suitable heat sink, and follow the recommended PCB layout and assembly guidelines.
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The maximum allowable voltage for the IRF640NSTRLPBF is 200V.
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Yes, the IRF640NSTRLPBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
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Handle the device with ESD-protective equipment, use an ESD-protective wrist strap, and follow proper handling and storage procedures to prevent ESD damage.