Part Details for IRF640NSTRLHR by Infineon Technologies AG
Results Overview of IRF640NSTRLHR by Infineon Technologies AG
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IRF640NSTRLHR Information
IRF640NSTRLHR by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRF640NSTRLHR
IRF640NSTRLHR CAD Models
IRF640NSTRLHR Part Data Attributes
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IRF640NSTRLHR
Infineon Technologies AG
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Datasheet
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IRF640NSTRLHR
Infineon Technologies AG
Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3/2
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| Rohs Code | No | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 247 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.15 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IRF640NSTRLHR Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF640NSTRLHR is -55°C to 175°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 150°C for optimal performance and reliability.
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To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material (TIM) between the device and the heat sink. The heat sink should be designed to dissipate the maximum power dissipation of the device, which is 250W. Additionally, ensure good airflow around the heat sink to prevent overheating.
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The recommended gate drive voltage for the IRF640NSTRLHR is between 10V and 15V. However, the device can tolerate gate drive voltages up to 20V. It's essential to ensure the gate drive voltage is within the recommended range to prevent damage to the device.
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To protect the IRF640NSTRLHR from overvoltage and overcurrent conditions, it's recommended to use a voltage clamp or a zener diode to limit the voltage across the device. Additionally, consider using a current sense resistor and a comparator to detect overcurrent conditions and shut down the device if necessary.
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For optimal performance and reliability, it's recommended to follow good PCB design practices, such as using a multi-layer PCB with a solid ground plane, keeping the power traces short and wide, and using a Kelvin connection for the gate drive. Additionally, ensure the PCB is designed to handle the high current and voltage ratings of the device.