Part Details for IRF640NLPBF by International Rectifier
Results Overview of IRF640NLPBF by International Rectifier
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF640NLPBF Information
IRF640NLPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF640NLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Transistors | 1523 |
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RFQ |
Part Details for IRF640NLPBF
IRF640NLPBF CAD Models
IRF640NLPBF Part Data Attributes
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IRF640NLPBF
International Rectifier
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Datasheet
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IRF640NLPBF
International Rectifier
Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-262AA | |
| Package Description | LEAD FREE, PLASTIC, TO-262, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 247 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.15 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF640NLPBF
This table gives cross-reference parts and alternative options found for IRF640NLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF640NLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF640NL | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN | IRF640NLPBF vs IRF640NL |
IRF640NLPBF Frequently Asked Questions (FAQ)
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The maximum junction temperature that the IRF640NLPBF can withstand is 175°C. This is not explicitly stated in the datasheet, but it is a common specification for MOSFETs in this class.
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To ensure the IRF640NLPBF is fully turned on, you need to apply a gate-source voltage (Vgs) of at least 10V. This is because the threshold voltage (Vth) of the MOSFET is around 4V, and applying 10V or more ensures that the device is fully enhanced.
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The maximum current that the IRF640NLPBF can handle is 18A. This is the maximum continuous drain current (Id) rating, and it's essential to ensure that your application does not exceed this limit to prevent overheating and damage to the device.
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To protect the IRF640NLPBF from voltage spikes and transients, you can use a snubber circuit or a TVS (transient voltage suppressor) diode. These components can help absorb or clamp voltage transients and prevent them from damaging the MOSFET.
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The recommended PCB layout for the IRF640NLPBF involves keeping the drain and source pins as close as possible to minimize parasitic inductance. You should also use a solid ground plane and a low-impedance power supply connection to ensure stable operation.