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Part Details for IRF640B by Rochester Electronics LLC
Results Overview of IRF640B by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF640B Information
IRF640B by Rochester Electronics LLC is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRF640B
IRF640B CAD Models
IRF640B Part Data Attributes
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IRF640B
Rochester Electronics LLC
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Datasheet
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IRF640B
Rochester Electronics LLC
18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| Samacsys Manufacturer | Rochester Electronics | |
| Avalanche Energy Rating (Eas) | 250 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.18 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | NOT SPECIFIED | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF640B
This table gives cross-reference parts and alternative options found for IRF640B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF640B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| PHX2N60E | NXP Semiconductors | Check for Price | TRANSISTOR 1.3 A, 600 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, FULL PACK-3, FET General Purpose Power | IRF640B vs PHX2N60E |
| BUK552-60B,127 | NXP Semiconductors | Check for Price | 13A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF640B vs BUK552-60B,127 |
| PHP44N06T | NXP Semiconductors | Check for Price | TRANSISTOR 44 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power | IRF640B vs PHP44N06T |
| IRL1404ZLPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN | IRF640B vs IRL1404ZLPBF |
| APT6039BNR | Microsemi Corporation | Check for Price | 17A, 600V, 0.39ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD | IRF640B vs APT6039BNR |
| PHP80N06LT | NXP Semiconductors | Check for Price | TRANSISTOR 75 A, 55 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power | IRF640B vs PHP80N06LT |
| PHW8N50E | NXP Semiconductors | Check for Price | TRANSISTOR 8.5 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN, FET General Purpose Power | IRF640B vs PHW8N50E |
| BUK474-60H | NXP Semiconductors | Check for Price | TRANSISTOR 21 A, 60 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | IRF640B vs BUK474-60H |
| BFC45 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 9A, 800V, 1.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | IRF640B vs BFC45 |
| BUK455-60H | NXP Semiconductors | Check for Price | TRANSISTOR 43 A, 60 V, 0.034 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | IRF640B vs BUK455-60H |