Part Details for IRF640B by Fairchild Semiconductor Corporation
Results Overview of IRF640B by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF640B Information
IRF640B by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF640B
| Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | Electronic Component RoHS: Not Compliant |
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RFQ |
Part Details for IRF640B
IRF640B CAD Models
IRF640B Part Data Attributes
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IRF640B
Fairchild Semiconductor Corporation
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Datasheet
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IRF640B
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 250 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.18 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 139 W | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF640B
This table gives cross-reference parts and alternative options found for IRF640B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF640B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| BUK474-60H | NXP Semiconductors | Check for Price | TRANSISTOR 21 A, 60 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | IRF640B vs BUK474-60H |
| PHP60N06LT127 | NXP Semiconductors | Check for Price | TRANSISTOR 58 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | IRF640B vs PHP60N06LT127 |
| BUK754R0-55B | Nexperia | Check for Price | Power Field-Effect Transistor | IRF640B vs BUK754R0-55B |
| BUK574-60H | NXP Semiconductors | Check for Price | TRANSISTOR 20 A, 60 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | IRF640B vs BUK574-60H |
| IRL1404ZLPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN | IRF640B vs IRL1404ZLPBF |
| APT6039BNR | Microsemi Corporation | Check for Price | 17A, 600V, 0.39ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD | IRF640B vs APT6039BNR |
| PHP33N10 | NXP Semiconductors | Check for Price | TRANSISTOR 34 A, 100 V, 0.057 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power | IRF640B vs PHP33N10 |
| APT1001RBNR | Advanced Power Technology | Check for Price | Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | IRF640B vs APT1001RBNR |
| BUK455-60H | NXP Semiconductors | Check for Price | TRANSISTOR 43 A, 60 V, 0.034 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | IRF640B vs BUK455-60H |
| APT5030BNR | Advanced Power Technology | Check for Price | Power Field-Effect Transistor, 21A I(D), 500V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | IRF640B vs APT5030BNR |
IRF640B Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF640B is not explicitly stated in the datasheet, but it can be determined by consulting the Fairchild Semiconductor application note AN-936, which provides guidelines for calculating the SOA for power MOSFETs.
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To ensure proper thermal management, it is recommended to attach a heat sink to the IRF640B, and to ensure good thermal contact between the device and the heat sink. The thermal resistance of the heat sink and the thermal interface material should be minimized to ensure efficient heat transfer.
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The recommended gate drive voltage for the IRF640B is between 10V and 15V, with a maximum gate-source voltage of ±20V. A higher gate drive voltage can improve switching performance, but may also increase power consumption and electromagnetic interference (EMI).
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To protect the IRF640B from electrostatic discharge (ESD), it is recommended to handle the device with anti-static precautions, such as using an anti-static wrist strap or mat, and to ensure that the device is properly grounded during handling and assembly.
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The maximum allowed voltage transient for the IRF640B is not explicitly stated in the datasheet, but it is generally recommended to limit voltage transients to less than 50% of the maximum rated voltage to ensure reliable operation and prevent damage to the device.