Part Details for IRF630S by Vishay Intertechnologies
Results Overview of IRF630S by Vishay Intertechnologies
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IRF630S Information
IRF630S by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRF630S
IRF630S CAD Models
IRF630S Part Data Attributes
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IRF630S
Vishay Intertechnologies
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Datasheet
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IRF630S
Vishay Intertechnologies
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SMD-220, 3 PIN | |
| Reach Compliance Code | unknown | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 250 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 9 A | |
| Drain-source On Resistance-Max | 0.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 74 W | |
| Pulsed Drain Current-Max (IDM) | 36 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF630S
This table gives cross-reference parts and alternative options found for IRF630S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF630S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF630S | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-220, 3 PIN | IRF630S vs IRF630S |
| IRF630STRL | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-220, 3 PIN | IRF630S vs IRF630STRL |
| IRF630S | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF630S vs IRF630S |
| IRF630S/T3 | NXP Semiconductors | Check for Price | TRANSISTOR 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-404, D2PAK-3, FET General Purpose Power | IRF630S vs IRF630S/T3 |
| IRF630STRL | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | IRF630S vs IRF630STRL |
| IRF630S | NXP Semiconductors | Check for Price | 9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-404, D2PAK-3 | IRF630S vs IRF630S |
| IRF630NS | International Rectifier | Check for Price | Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | IRF630S vs IRF630NS |
| IRF630NSPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | IRF630S vs IRF630NSPBF |