Part Details for IRF6215SPBF by International Rectifier
Results Overview of IRF6215SPBF by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRF6215SPBF Information
IRF6215SPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRF6215SPBF
IRF6215SPBF CAD Models
IRF6215SPBF Part Data Attributes
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IRF6215SPBF
International Rectifier
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Datasheet
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IRF6215SPBF
International Rectifier
Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | LEAD FREE, PLASTIC, D2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 310 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 13 A | |
| Drain-source On Resistance-Max | 0.29 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 110 W | |
| Pulsed Drain Current-Max (IDM) | 44 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF6215SPBF
This table gives cross-reference parts and alternative options found for IRF6215SPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF6215SPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRF6215STRL | International Rectifier | Check for Price | Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | IRF6215SPBF vs IRF6215STRL |
IRF6215SPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF6215SPBF is -55°C to 175°C, as specified in the datasheet. However, it's recommended to derate the power handling capability at higher temperatures to ensure reliable operation.
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To ensure proper biasing, make sure to provide a stable gate-source voltage (Vgs) within the recommended range of 2V to 4V. Also, ensure the gate drive circuitry is capable of providing sufficient current to charge and discharge the gate capacitance quickly.
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For optimal thermal management, use a PCB with a thick copper layer (at least 2 oz) and ensure good thermal conductivity between the device and the heat sink. Keep the PCB layout compact and symmetrical to minimize parasitic inductances and capacitances. Use thermal vias to connect the device to the heat sink, and apply a thermal interface material (TIM) to reduce thermal resistance.
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Use a voltage clamp or a zener diode to protect the device from overvoltage conditions. For overcurrent protection, use a current sense resistor and a comparator to detect excessive current. You can also use a dedicated overcurrent protection IC or a fuse to disconnect the power supply in case of an overcurrent event.
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The recommended gate resistor value depends on the specific application and the gate drive circuitry. A typical value is around 10 ohms to 20 ohms, but it may need to be adjusted based on the gate drive strength and the switching frequency.