Part Details for IRF610STRLPBF by Vishay Intertechnologies
Results Overview of IRF610STRLPBF by Vishay Intertechnologies
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
IRF610STRLPBF Information
IRF610STRLPBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF610STRLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF610STRLPBF
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Avnet Americas | MOSFET N-CHANNEL 200V - Tape and Reel (Alt: IRF610STRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
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$0.6576 / $0.6987 | Buy Now |
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DISTI #
844-IRF610STRLPBF
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Mouser Electronics | MOSFETs N-Chan 200V 3.3 Amp RoHS: Compliant | 750 |
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$0.6980 / $2.0800 | Buy Now |
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DISTI #
E02:0323_00193825
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Arrow Electronics | Trans MOSFET N-CH 200V 3.3A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Lead time: 8 Weeks Date Code: 2421 | Europe - 4000 |
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$0.4443 / $0.4608 | Buy Now |
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DISTI #
82700994
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Verical | Trans MOSFET N-CH 200V 3.3A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Date Code: 2421 | Americas - 4000 |
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$0.4423 / $0.4587 | Buy Now |
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DISTI #
IRF610STRLPBF
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TTI | MOSFETs N-Chan 200V 3.3 Amp RoHS: Compliant pbFree: Pb-Free Min Qty: 800 Package Multiple: 800 Container: Reel | Americas - 0 |
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$0.6820 / $0.7230 | Buy Now |
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DISTI #
IRF610STRLPBF
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TME | Transistor: N-MOSFET, unipolar, 200V, 3.3A, Idm: 10A, 36W Min Qty: 1 | 0 |
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$0.5390 / $1.4360 | RFQ |
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ComSIT USA | POWER MOSFET Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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DISTI #
IRF610STRLPBF
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IBS Electronics | TRANS MOSFET N-CH 200V 3.3A 3-PIN(2+, TAB) D2PAK T/R Min Qty: 800 Package Multiple: 1 | 0 |
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$0.9425 / $0.9880 | Buy Now |
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DISTI #
IRF610STRLPBF
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EBV Elektronik | MOSFET NCHANNEL 200V (Alt: IRF610STRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 9 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IRF610STRLPBF
IRF610STRLPBF CAD Models
IRF610STRLPBF Part Data Attributes
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IRF610STRLPBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRF610STRLPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Part Package Code | D2PAK | |
| Package Description | TO-263, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 64 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 3.3 A | |
| Drain-source On Resistance-Max | 1.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 36 W | |
| Pulsed Drain Current-Max (IDM) | 10 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF610STRLPBF
This table gives cross-reference parts and alternative options found for IRF610STRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF610STRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF610SPBF | Vishay Intertechnologies | $1.2014 | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, 3 PIN | IRF610STRLPBF vs IRF610SPBF |
IRF610STRLPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF610STRLPBF is -55°C to 150°C.
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The IRF610STRLPBF is a standard MOSFET, which means it requires a higher gate-source voltage (Vgs) to turn on compared to a logic-level MOSFET.
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The maximum current rating for the IRF610STRLPBF is 12A, but this rating is dependent on the operating conditions and heat sink used.
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The IRF610STRLPBF has a relatively high gate charge (Qg) and output capacitance (Coss), which makes it less suitable for high-frequency switching applications above 100 kHz.
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Yes, the IRF610STRLPBF can be used in a synchronous buck converter, but it may not be the best choice due to its relatively high Rds(on) and Qg, which can lead to increased power losses and reduced efficiency.