Part Details for IRF610SPBF by Vishay Siliconix
Results Overview of IRF610SPBF by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
IRF610SPBF Information
IRF610SPBF by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF610SPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF610SPBF-ND
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DigiKey | MOSFET N-CH 200V 3.3A D2PAK Min Qty: 1 Lead time: 15 Weeks Container: Tube |
243 In Stock |
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$0.6987 / $1.7700 | Buy Now |
Part Details for IRF610SPBF
IRF610SPBF CAD Models
IRF610SPBF Part Data Attributes
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IRF610SPBF
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
IRF610SPBF
Vishay Siliconix
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | D2PAK | |
| Package Description | ROHS COMPLIANT, TO-263, D2PAK-3 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 64 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 3.3 A | |
| Drain-source On Resistance-Max | 1.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 10 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF610SPBF
This table gives cross-reference parts and alternative options found for IRF610SPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF610SPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF610STRRPBF | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | IRF610SPBF vs IRF610STRRPBF |
IRF610SPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF610SPBF is -55°C to 175°C.
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To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V to 4V for optimal performance. Additionally, the drain-source voltage (Vds) should be within the recommended range of 200V.
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The recommended gate resistor value for the IRF610SPBF is typically between 10Ω to 100Ω, depending on the specific application and switching frequency.
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To handle the IRF610SPBF's high current handling capability, ensure proper heat sinking, use a suitable PCB layout, and consider using a thermal interface material to improve heat transfer.
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The IRF610SPBF has an internal ESD protection diode, but it's still recommended to follow proper ESD handling procedures during assembly and storage to prevent damage.